Download PDF2SA1797 SUNTAC
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Power Transistor (-50V, -3A) ʳ ϥFeatures 1) Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797. ϥAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6V -3 A (DC) Collector current I C -5 A (Pulse) * 0 . 5 2 *2 Collector power dissipation 2SA1797 PC 1 *3 W Junction temperature Tj 150 к Storage temperature Tstg -55~ 150 к *1 Single pulse, Pw=10ms *2 When mounted on a 40x 40x 0.7mm ceramic board. *3 Printed circuit board 1.7mm thick, collector plating 1cф or larger . ϥPackaging specifications and hFE Type 2SA1797 Package SOT-89 hFE PQ Marking AG Code T100 Basic ordering unit (Pieces) 1000 *Denotes hFE ϥElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BV CBO -50 V ICГ-50uA Collector-emitter breakdown voltage BVCEO -50 V ICГ-1 mA Emitter-base breakdown voltage BVEBO -6 V IEГ-50uA Collector cutoff current ICBO -0.1 µA VCBГ-50V Emitter cutoff current IEBO -0.1 µA VEBГ-5V Collector-emitter saturation voltage V CE(sat) -0.15 -0.35 V IC/IBГ-1 A / - 5 0 m A * DC current transfer ratio 2SA1797 hFE 82 270 VCE/ICГ-2 V / - 0 . 5 A * Transition frequency fT 200 MHz VCEГ-2V, IEГ0.5A, fГ100MHz Output capacitance Cob 36 pF VCBГ-10V, IEГ0A, f Г1MHz *Measured using pulse current SOT-89 1:EMITTER 2:COLLECTOR 3:BASE 2SA1797
TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Static characteristics -Collector-Emitter voltage(V) -Ic,Collector current(A) 04 8 1 21 6 2 0 0.4 0.8 1.2 1.6 Tc,Case Temperature(°C) -IB=1mA -IB=2mA -IB=3mA -IB=4mA -IB=5mA -IB=6mA -IB=7mA -IB=8MA -IB=9mA Fig.2 Derating curve of safe operating areas - Ic Derating(%) 200150100500-50 100 150 S/blimited Dissipationlimited Tc,Case Temperature(°C) 200150100500-50 Fig.3 Power Derating Power Dissipation(W) Fig.4 Collector Output capacitance -Collector-Base Voltage(v) Output Capacitance(pF) 100 10-1 10-2 10-3 101 102 103 100 IE=0 f=1MHz Fig.5 Current gain- bandwidth product FT(MHz), Current gain- bandwidth product 101 102 103 100 VCE=5V Collector-Emitter Voltage -Ic,Collector current(A) Fig.6 Safe operating area Ic(max),DC Ic(max),Pulse 10mS 1mS 0.1mS Ic,Collector current(A) Fig.7 DC current gain -Ic,Collector current(mA) -Ic,Collector current(mA) Fig.8 Saturation Voltage DC current Gain,HFE 101 102 103 100 -Saturation Voltage(mV) VCE=-2V VCE(sat) VBE(sat) 10-2 10-1 100 101 10-2 10-1 100 101 100 101 102 100 101 102 103 104 100 101 102 103 104 100 101 102 103 104 IB=8mAIB=8mA