2SA1791 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4656 n Features l High transition frequency fT. l Small collector output capacitance Cob. l SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–75 3:Collector SS–Mini Type Package Symbol V CBO V CEO V EBO IC PC Tj Tstg Ratings –50 –50 –50 125 125 –55 ~ +125 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol I CBO ICEO V CBO V CEO V EBO hFE V CE(sat) fT C ob Conditions V CB = –10V, IE = 0 V CE = –10V , IB = 0 IC = –10mA, IE = 0 IC = –1mA, IB = 0 IE = –10mA, IC = 0 V CE = –10V , IC = –2mA IC = –10mA, IB = –1mA V CB = –10V , IE = 2mA, f = 200MHz V CB = –10V , IE = 0, f = 1MHz min –50 –50 200 typ – 0.1 250 1.5 max – 0.1 –100 500 – 0.3 Unit mA mA V V V V MHz pF *hFE Rank classification Rank Q R hFE 200 ~ 400 250 ~ 500 Marking Symbol ALQ ALR 1.6–0.15 1.6–0.1 1.0–0.10.75–0.15 0.45–0.1 0.50.3 0 to 0.1 0.5 0.8–0.1 0.40.4 0.2–0.1 Marking symbol :AL

0 160 40 120 80 14020 100 60 150 125 100 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) –120 –100 –80 –60 –40 –20 Ta=25˚C –250mA –200mA –150mA –100mA –50mA IB=–300mA Collector to emitter voltage VCE (V) Collector current IC (mA ) –60 –50 –40 –30 –20 –10 VCE =–10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 600 500 400 300 200 100 VCE =–10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 0.1 1 10 1000.3 3 30 600 500 400 300 200 100 VCB =–10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C fT —I E C ob —V CB