2SA1773 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 isc SiliconPNPPowerTransistor 2SA1773
DESCRIPTION
- High breakdown voltage: V(BR)CEO>-400V@IC=-1mA
- Large currentcapacity
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Designedforhigh currentswitchingapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -400 V VCEO Collector-EmitterVoltage -400 V VEBO Emitter-BaseVoltage -5 V IC CollectorCurrent-Continuous -2 A PC TotalPowerDissipation @TC=25℃ 15 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 isc SiliconPNPPowerTransistor 2SA1773 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=-1mA;IB=0 -400 V VCE(sat) Collector-EmitterSaturationVoltage IC=-0.5A;IB=-0.05A -1.0 V VBE(sat) Base-EmitterSaturationVoltage IC=-0.5A;IB=-0.05A -1.0 V ICBO CollectorCutoffCurrent VCB=-300V;IE=0 -1 μA IEBO EmitterCutoffCurrent VEB=-4V;IC=0 -1 μA hFE DCCurrentGain IC=-0.1A;VCE=-10V 40 200 hFE Classifications C D E 40-80 60-120 100-200