Download PDF2SA1767_V01 PANASONIC
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1Publication date: January 2003 SJC00030BED 2SA1767 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A ■ Features
- High collector-emitter voltage (Base open) VCEO ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO −300 V Collector-emitter voltage (Base open) V CEO −300 V Emitter-base voltage (Collector open) V EBO −5V Collector current IC −70 mA Peak collector current ICP −100 mA Collector power dissipation PC 750 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V CEO IC = −100 µA, IB = 0 −300 V Emitter-base voltage (Collector open) V EBO IE = −1 µA, IC = 0 −5V Forward current transfer ratio * hFE VCE = −10 V, IC = −5 mA 30 150 Collector-emitter saturation voltage V CE(sat) IC = −10 mA, IB = −1 mA − 0.6 V Transition frequency fT VCB = −10 V, IE = 10 mA, f = 200 MHz 50 MHz Collector output capacitance C ob VCB = −10 V, IE = 0, f = 1 MHz 7 pF (Common base, input open circuited) ■ Electrical Characteristics Ta = 25°C ± 3°C Unit: mm 5.0±0.2 0.7±0.1 0.45+0.15 –0.1 2.5+0.6 –0.2 0.45+0.15 –0.1 2.5 12 3 +0.6 –0.2 4.0±0.2 5.1±0.212.9±0.5 2.3±0.2 0.7±0.2 1: Emitter 2: Collector 3: Base Rank P Q hFE 30 to 100 60 to 150 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification
2 SJC00030BED
VCE(sat) IC hFE IC fT IE PC Ta IC VCE IC VBE Cob VCB ICEO Ta 0 16040 12080 14020 10060 1 000 800 600 400 200 Collector power dissipation PC (mW) Ambient temperature Ta (°C) −100 −80 −60 −40 −20 Ta = 25°C − 0.2 mA − 0.1 mA − 0.3 mA − 0.4 mA − 0.5 mA − 0.6 mA − 0.7 mA − 0.8 mA − 0.9 mA IB = −1.0 mA Collector current IC (mA) Collector-emitter voltage VCE (V) −120 −100 −80 −60 −40 −20 VCE = −10 V Ta = 75°C −25°C 25°C Base-emitter voltage VBE (V) Collector current IC (mA) − 0.1 −1 −10 −100 − 0.01 − 0.1 −10 −100 IC / IB = 10 Ta = 75°C25°C −25°C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) − 0.1 −1 −10 −100 300 250 200 150 100 VCE = −10 V Ta = 75°C 25°C −25°C Forward current transfer ratio hFE Collector current IC (mA) 0.1 1 10 100 120 100 VCB = −10 V Ta = 25°C Transition frequency fT (MHz) Emitter current IE (mA) −1 −10 −100 IE = 0 f = 1 MHz Ta = 25°C Collector-base voltage VCB (V) Collector output capacitance (Common base, input open circuited) Cob (pF) 0 240 200 16040 120 80 100 1 000 10 000 VCE = −120 V Ambient temperature Ta (°C) ICEO (Ta) ICEO (Ta = 25°C)
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