2SA1766_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors PNP Transistors 2SA1766 ■ Features
- Adoption of FBET, MBIT processes.
- High DC current gain (hFE=500 to 1200).
- Large current capacity.
- Low collector-to-emitter saturation voltage.
- High VEBO. 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 Emitter - Base Voltage VEBO -15 Collector Current - Continuous IC -300 Collector Current - Pulse ICP -500 Base Current IB -60 Collector Power Dissipation (Note.1) PC 1.3 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V mA Note.1: Mounted on ceramic board (250mm X 0.8mm)2 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 uA， IE=0 -30 Collector- emitter breakdown voltage VCEO Ic= -1 mA，RBE= ∞ -25 Emitter - base breakdown voltage VEBO IE= -100 uA， IC=0 -15 Collector-base cut-off current ICBO VCB= -20 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -10 V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-200 mA, IB=-4 mA -0.12 -0.5 Base - emitter saturation voltage VBE(sat) IC=-200 mA, IB=-4 mA -0.77 -1.1 hFE(1) VCE= -5V, IC= -10 mA 500 800 1200 hFE(2) VCE= -5V, IC= -200 mA 200 Collector output capacitance Cob VCB= -10V, f=1MHz 12 pF Transition frequency fT VCE= -10V, IC= -10 mA 100 MHz DC current gain V uA V ■ Marking Marking AL
www.kexin.com.cn2 Transistors PNP Transistors 2SA1766 ■ Typical Characterisitics
www.kexin.com.cn 3 Tran sistors PNP Transistors 2SA1766 ■ Typical Characterisitics