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Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–71 3:Emitter M Type Mold Package Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings –80 –80 – 0.5 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol I CBO V CBO V CEO V EBO hFE1 * hFE2 V CE(sat) V BE(sat) fT C ob Conditions V CB = –20V, IE = 0 IC = –10mA, IE = 0 IC = –100mA, IB = 0 IE = –10mA, IC = 0 V CE = –10V , IC = –150mA V CE = –5V , IC = –500mA IC = –300mA, IB = –30mA IC = –300mA, IB = –30mA V CB = –10V , IE = 50mA, f = 200MHz V CB = –10V , IE = 0, f = 1 MHz min –80 –80 130 typ 100 – 0.2 – 0.85 max – 0.1 330 – 0.4 –1.2 Unit mA V V V V V MHz pF 6.9–0.1 1.0–0.1 1.0 2.5–0.1 1.0 1.5 1.5 R0.9 R0.9 R0.7 0.4 0.85 4.1–0.2 4.5 –0.1 2.5 2.5 123 * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion *hFE1 Rank classification Rank R S hFE1 130 ~ 220 185 ~ 330 2SA1762 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC4606 n Features l High collector to emitter voltage VCEO . l Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. n Absolute Maximum Ratings (Ta=25˚C)
0 160 40 120 80 14020 100 60 1.2 1.0 0.8 0.6 0.4 0.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –1.2 –1.0 – 0.8 – 0.6 – 0.4 – 0.2 Ta=25˚C IB=–10mA –9mA –8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA Collector to emitter voltage VCE (V) Collector current IC (A) –1.2 –1.0 – 0.8 – 0.6 – 0.4 – 0.2 VCE =–10V Ta=25˚C Base current IB (mA ) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –10 IC /IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=–25˚C 25˚C 75˚C Collector current IC (mA ) Base to emitter saturation voltage VBE(sat) (V) 300 250 200 150 100 VCE =–10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 1 10 100 10003 30 300 120 100 VCB =–10V f=200MHz Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0 180 60 120 102 103 104 VCB =–20V Ambient temperature Ta (˚C) ICBO (Ta) ICBO (Ta=25˚C) PC —T a I C —V CE IC —I B V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I E C ob —V CB ICBO —T a
VCE =–10V Ambient temperature Ta (˚C) ICEO (Ta) ICEO (Ta=25˚C) – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –10 Single pulse Ta=25˚C t=10ms t=1s ICP IC Collector to emitter voltage VCE (V) Collector current IC (A) ICEO — Ta Area of safe operation (ASO)