2SA1738 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Silicon PNP epitaxial planer type For high speed switching n Features l High-speed switch (pair with 2SC3757) l Low collector to emitter saturation voltage VCE(sat). l Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.950.95 1.9–0.2 0.4 +0.1 –0.05 1.1 +0.2 –0.10.8 0.4–0.2 0 to 0.1 0.16 +0.1 –0.06 1.45 0.1 to 0.3 2.9 +0.2 –0.05 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –15 –15 –100 –50 200 150 –55 ~ +150 Unit V V V mA mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time Symbol I CBO IEBO hFE1 * hFE2 V CE(sat) fT C ob ton toff tstg Conditions V CB = –8V , IE = 0 V EB = –3V , IC = 0 V CE = –1V , IC = –10mA V CE = –1V , IC = –1mA IC = –10mA, IB = –1mA V CB = –10V , IE = 10mA, f = 200MHz V CB = –5V , IE = 0, f = 1MHz (Note 1) Next page (Note 1) Next page (Note 1) Next page min 800 typ – 0.1 1500 max – 0.1 – 0.1 150 – 0.2 Unit mA mA V MHz pF ns ns ns *hFE1 Rank classification Rank Q R hFE1 50 ~ 120 90 ~ 150 Marking symbol :AK
0 160 40 120 80 14020 100 60 240 200 180 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) –60 –50 –40 –30 –20 –10 Ta=25˚C –300mA –500mA –400mA –100mA –200mA IB=–600mA Collector to emitter voltage VCE (V) Collector current IC (mA ) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=–25˚C 25˚C 75˚C Collector current IC (mA ) Base to emitter saturation voltage VBE(sat) (V) 240 200 160 120 VCE =–10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 1 3 10 30 100 2400 2000 1600 1200 800 400 VCB =–10V f=200MHz Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 2.4 2.0 1.6 1.2 0.8 0.4 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 2kW 62W 51W VBB Vin Vin VCC =–1.5V Vin=–5.8V VBB =Ground Vin=9.8V VBB =–8.0V Vout0.1mF 52W 10% 10%90%Vout 90% ton toff 508W 30W 51W VBB =–10V Vin VCC =–3V Vin=9.0V Vout0.1mF 34W Vin Vout 90% toff 90% PC —T a IC —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I E C ob —V CB Switching time measurement circuit ton, toff Test Circuit t stg Test Circuit