2SA1736

2SA1736_15 KEXIN

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SA1736 ■ Features

• Low saturation voltage
• High speed switching time
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
• Complementary to 2SC4541 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -3 BaseCurrent IB -0.6 Collector Power Dissipation 0.5 (Note.1) 1 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A PC W Note.1: Mounted on ceramic board (250mm X 0.8mm)2 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -1 mA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -10 mA，IB= 0 -50 Emitter - base breakdown voltage VEBO IE= -1 mA， IC=0 -6 Collector-base cut-off current ICBO VCB= -60 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -6V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-1.5 A, IB=-75 mA -0.5 Base - emitter saturation voltage VBE(sat) IC=-1.5 A, IB=-75 mA -1.2 hFE(1) VCE= -2V, IC= -100 mA 120 400 hFE(2) VCE= -2V, IC= -2 A 40 Turn-on Time ton 0.1 Storage time tstg 0.2 Fall time tf 0.1 Collector output capacitance Cob VCB= -10V,IE=0, f=1MHz 32 pF Transition frequency fT VCE= -2V, IC= -100 mA 100 MHz See specified Test Circuit us DC current gain V uA V ■ Marking Marking L*D

www.kexin.com.cn2 Transistors PNP Transistors 2SA1736 Switching Time Test Circuit 20 Ω IB2 VCC = −30 V IB1 20 μs IB1 = 75 mA,IB2 = 75 mA, DUTY CYCLE ≤ 1% IB1 IB2 OUTPUT INPUT ■ Typical Characterisitics VCE (sat) – IC VBE (sat) – IC IC – VCE hFE – IC Collector current IC (mA) Collector-emitter voltage VCE (V) Collector current IC (A) Collector current IC (mA) Collector-emitter saturation voltage VCE (sat) (V) DC current gain hFE Collector current IC (mA) Base-emitter saturation voltage VBE (sat) (V) 1000 −10 −300 −3 300 Common emitter VCE = −2 V −30 −100 Ta = 100°C 100 25 −25 −1000 −3000 −100 0 −5 −1 Common emitter Ta = 25°C IB = −5 mA −4 −2 −20 −60 −40 −30 −10 −15 −50 −80 Ta = −25°C 100 Common emitter IC/IB = 20 −100 −10 −300 −3 −30 −30 −100 −0.1 −10 −1000 −3000 −0.3 −10 Common emitter IC/IB = 20 −0.01 Ta = 100°C −25 −0.03 −0.1 −0.3

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SA1736 ■ Typical Characterisitics PC – Ta IC – VBE Safe Operating Area Collector-emitter voltage VCE (V) Collector current IC (A) Collector current IC (A) Base-emitter voltage VBE (V) Ambient temperature Ta (°C) Collector power dissipation PC (W) 0 −1.6 −0.8 −0.4 −1.0 −3.0 Common emitter VCE = −2 V −2.0 −1.2 −25 Ta = 100°C −0.5 −1.5 −2.0 −2.5 (1) 0 160100 140 40 80 0.6 0.2 0.8 0.4 1.4 (1) Mounted on a ceramic substrate (250 mm2 × 0.8 t) (2) No heat sink (2) 1.0 60 120 1.2 −0.1 −10 −1 −0.3 −10 −0.01 −30 −0.005 −0.03 IC max (pulse)* IC max (continuous) 100 ms* 10 ms* t = 1 ms* −0.1 −0.3 −100 *: Single nonrepetitive pulse Ta = 25°C : Mounted on a ceramic substrate Curves must be derated linearly with increase in temperature : DC operation 40 × 50 × 0.8 t **: DC operation 250 mm2 × 0.8 t DC operation Ta = 25°C VCEO max