2SA1735 TOSHIBA
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- Manufacturer or author: Provided By digicamel.com
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Technical content
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS Unit in mm POWER SWITCHING APPLICATIONS Lemax 4.9Max. F 1.7MAX 0440.05 e Low Saturation Voltage : VCE (sat) = —0.5V (Max.) 3 (ig = —500mA) FA 3 ¢ High Speed Switching Time: tgtg=0.25s (Typ.) 2908 2 0.45 -0.05' b ¢ Small Flat Package ° oatG8tll | tLaazgee @ Pc=1~2W (Mounted on Ceramic Substrate) 1540.1 1540.1 © Complementary to 28C4540 1 2 3 1. BASE MAXIMUM RATINGS (Ta = 25°C) 2. COLLECTOR (HEAT SINK) CHARACTERISTIC SYMBOL PW-MINI 3. EMITTER Collector-Base Voltage VcBO | -so | v | JEDEC - Collector-Emitter Voltage VcEO ELAS SC-62 Emitter-Base Voltage vepo | _-6 | v_|[TOSHIBA 25K1A Collector Current Weight : 0.05 [Base Curent | ws] 0.2 | A | tacking Collector Power Dissipation = Collector Power Dissipation 1000 J uc | Storage Temperature Range —55~150 « : Mounted on ceramic substrate (250mm? X 0.8t) 2610016402 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility ‘of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing. your designs, please ensure that TOSHIBA. products are, used within specified Operating, ranges as 4at forth in the most recent products spectications. Also, please Keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsibility js, assumed by, TOSHIBA CORPORATION for ary Infringements of intellect propertyor other rights Gf tne third parvies wich may resui from Ms use. NO. Ncense’s granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-04-10 1/3
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION | wan. | rye. [max. [unr] Collector Cut-off Current Icpo__|Vop=—-60V, In=0 [| — [| — [-o1] pa | [Bmitter Cut-off Current | Ippo | VEp=~6V, Io=0 | = | = [-o1] a | Collector-Emitter Breakdown Voltage (BR) CBO] TO= ~10mA, TR=0 j-»| - | - | | hpe@) |Voe=-2V,Ic=-T00ma | 40] — | — | Collector-Emitter Saturation Voltage Vor (sat)|10= ~ 500m A, TB= — 25mA | = | = |-o5] «| Base-Emitter VBE (sat)] 10= —500mA, TB= —25mA | - | - [2] » | Vor==2V, Ic=—100ma | — | 100 | — | wine | Vop=~10V, Ip=0, f=1MHe | — | 16[ — | pF | tm 3 ae I pas S Switching Storage Time | tstg a) 0% Tp1 ° us Time 20, Vv 25V us oc=- . —Ipi=Ipg=25mA, Fall Time tf DUTY CYCLE=1% ol 1997-04-10 2/3
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é We? Ll= [7 fl oe 3 -o4 Ls ee Sasi Sat Sr aee B e VT _| | | ft i 2 eT ce oo ce | Bg SSeS es] B lam 3; a so Ta cies | es aren i LLIN Tih vee=-2v <1 -3 -10 -30 -100 -300 —1000 -3000 SeeSe0eee0 coun CORE COLLECTOR-EMITTER VOLTAGE Vcg (V) Ic - VBE Ea Pc - Ta “12 S12 LE [TTPJD cossox enrrren £YETEEE Ho mowsren ow crane | | | | Ui Vor=-2V z as SUBSTRATE (250mm?x0.8t) 2 -10) = ~ @ NO HEAT SINK S ELE ETAT TT @ eCCCoPN ° 3 “| TT TEN ETT TTT e Cocomeee ee CESS Led N PCOCOMICoo EEN g 2 COCOONS POPUP Ep ERENCE z 06 LL 8 CODECS RSENE g | [mow PP | | | | a CCPC AT JC ES 8 oa 5 o 2 4 60 60 100 120 140 160 Yt A Tt AMBIENT TEMPERATURE T6 > cof LE || | APT yt ttt? Titty ty 0 -04 -08 -12 -16 -20 BASE-EMITTER VOLTAGE Vpe (V) 1997-04-10 373