2SA1732 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Features

  • Adoption of FBET, MBIT processes + Large current capacity - Low collector-to-emitter saturation voltage - Fast switching speed Absolute Maximum Ratings at Ta= 25°C unit Collector to Base Voltage Veso —50 Vv Collector to Emitter Voltage Vcoro -40 Vv Emitter to Base Voltage VeBo -5 v Collector Current Io -8 A Collector Current(Pulse) Icp -12 A Collector Dissipation Po 1 WwW Te=25°C 15 WwW Junction Temperature Tj 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current Icpo Vep= —40V,Ig=0 -1 pA Emitter Cutoff Current Tgno Vep= —3V,Ic¢=0 -1 pA DC Current Gain hpg(1) Ver= —2V,Ic¢= ~—500mA 10% 280% hpg(2) Vor= —-2V,Ic=—8A 25 Gain-Bandwidth Product fy Vop= —2V,Ic¢= —500mA 250 MHz Output Capacitance Cob Vop= —10V,f=1MHz 100 pF C-E Saturation Voltage Voxteat) Ig= —4A,Ip= —200mA -03 -08 V B-E Saturation Voltage VBE(sat) Ic= —4A,lp= —200mA -0.95 -13 Vv C-B Breakdown Voltage ViBRICBO Ic= —100pA, Ip =0 50 Vv C-E Breakdown Voltage Vipryceo c= — mA, Rgg= 40 v E-B Breakdown Voltage V(BR)EBO Ip=—100pA,Ic=0 -5 Vv Turn-ON Time ton See specified Test Circuit. 50 100 ns Storage Time tstg a 120 220 ns Turn-OFF Time torr ” 150 300 ns *: The 25A1732 is classified by 500mA hryg as follows: [70 @ 140 [100 R200 | 140 s 280 | ‘

70 Q 140 100 R_200 140 5 280 Package Dimensions 2044B

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VBE = Nec=-25V |__. a 2:Collector BD py=-2 Ipz= ee 4A 723 1: Base 3: Brite 2: Collector :Cotlector Unit (Capacitance : F) fs] 3: Emitter SANYO: TP-FA 23-ffok-23 4:Collector SANYO: TP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 6299MO,TS No.3136-1/3

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P| i a a OS o 2 IN neve TT CTT NT Po eentsion | Single pulse TTT TT TNT 0 en 01 1.0 10 Zio 0 a wo 60 cy Ee) 12 140 150 0 Collector to Emitter Voltage, Vcg ~ V Ambient Temperature,Ta — °C 1 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. y y Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. M Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.3136-3/3