2SA1730_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors PNP Transistors 2SA1730 ■ Features
- Large current capacity.
- Low collector-to-emitter saturation voltage.
- Fast switching speed.
- Small-sized package. 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -40 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -3 Collector Current -Pulse ICp -6 Collector Power Dissipation (Note.1) PC 1.5 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A Note.1: Mounted on ceramic board (250mm X 0.8mm)2 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 uA， IE=0 -50 Collector- emitter breakdown voltage VCEO Ic= -1 mA，RBE= ∞ -40 Emitter - base breakdown voltage VEBO IE= -100 uA， IC=0 -5 Collector-base cut-off current ICBO VCB= -40 V , IE=0 -1 Emitter cut-off current IEBO VEB= -3V , IC=0 -1 Collector-emitter saturation voltage VCE(sat) IC=-1.5 A, IB=-75 mA -0.3 -0.8 Base - emitter saturation voltage VBE(sat) IC=-1.5 A, IB=-75 mA -0.95 -1.3 hFE(1) VCE= -2V, IC= -500 mA 70 280 hFE(2) VCE= -2V, IC= -3 A 25 Turn-on Time ton 50 100 Storage time tstg 120 220 Tutn-off time toff 150 300 Collector output capacitance Cob VCB= -10V, f=1MHz 35 pF Transition frequency fT VCE= -2V, IC= -500 mA 300 MHz See specified Test Circuit ns DC current gain V uA V ■ Classification of hfe(1) Type 2SA1730-Q 2SA1730-R 2SA1730-S Range 70-140 100-200 140-280 Marking AHQ AHR AHS
www.kexin.com.cn2 Transistors PNP Transistors 2SA1730 Swicthing Time Test Circuit Unit (resistance : Ω, capacitance : F) ■ Typical Characterisitics
www.kexin.com.cn 3 Tran sistors PNP Transistors 2SA1730 ■ Typical Characterisitics