2SA1730 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Adoption of FBET , MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -50 V Collector-emitter voltage V CEO -40 V Emitter-base voltage V EBO -5 V Collector current I C -3 A Collector current (pulse) I CP -6 A Collector dissipation * P C 1.5 W Jumction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 * Mounted on ceramic board (250mm2 X 0.8mm).
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current Ic BO VCB =- 4 0 V,IE =0 - 1 ì A Emitter cutoff current I EBO VEB =- 3 V,IC =0 - 1 ì A DC current Gain h FE VCE =- 2 V,IC = -500mA 70 280 Gain bandwidth product f T VCE =- 2 V,IC = -500mA 300 MHz Common base output capacitance Cob V CB = -10V , f = 1MHz 35 pF Collector-to-emitter saturation voltage V CE(sat) IC = -1.5A , IB =-75mA -0.3 -0.8 V Base-to-emitter saturation voltage V BE(sat) IC = -1.5A , IB =-75mA -0.95 -1.3 V Collector-to-base breakdown voltage V (BR)CBO IC =- 1 0 ì A,IE =0 - 5 0 V Collector-to-emitter breakdown voltage V (BR)CEO IC =- 1 m A,RBE = -40 V Emitter-to-base breakdown voltage V (BR)EBO IE = -10ìA , IC =0 - 5 V Turn-on time t on 50 100 ns Storage time t stg 120 220 ns Turn-off time t off 150 300 ns 2SA1730 hFE Classification Marking Rank Q R S hFE 70 140 100 200 140 280 AH