2SA1729 SANYO
Document overview
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Technical content
Ordering number: EN 3133 Nooi83 2SA1729 i PNP Epitaxial Planar Silicon Transistor He High-Speed Switching Applications Features ' - Adoption of FBET, MBIT processes - Large current capacity . - Low collector-to-emitter saturation voltage - Fast switching speed - Small-sized package Absolute Maximum Ratings at Ta= 25°C unit Collector to Base Voltage Voeso 50 v Collector to Emitter Voltage Vcro -40 Vv Emitter to Base Voltage VEBO —5 Vv ‘ Collector Current Ic -15 A Collector Current(Pulse) Top -3 A Collector Dissipation Pc Mounted on ceramic board (250mm?2X0.8mm) 1.3 WwW Junction Temperature Tj 150 °C Storage Temperature Tstg —55to +150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current Topo Voep= —40V, In =0 -1 pA Emitter Cutoff Current Tso Vep= —3V,I¢=0 -1 pA DC Current Gain hpe(1) Voe=—2V,Ic= —100mA 10% 280% hpe(2) Vop=—2V,Ig=—1.5A 25 Gain-Bandwidth Product fp Vor=~2V,I¢= —100mA 300 Muz Output Capacitance Cob Vop= —10V,f=1MHz 18 pF C-E Saturation Voltage Venat) Ic=—800mA,Ip= —40mA -0.3 -0.8 Vv B-E Saturation Voltage Verisat) Ic=—800mA,Ip=—40mA -0.9 -13 Vv C-B Breakdown Voltage Veercso Ic=—10pA,Ig=0 —50 Vv C-E Breakdown Voltage Vipryceo Ic=—1mA,Rgg=” -40 v E-B Breakdown Voltage Veereso Ig=—10pAIc¢=0 -5 v Turn-ON Time ton See specified Test Circuit. 50 100 ns Storage Time tetg a 120 220 ns Turn-OFF Time tos % 150 300 ns %* : The 25A1729 is classified by 100mA hpgas follows :
70 Q 140 100 R 200 140 S$ 280 (unit : mm)
Marking : AG 4s 18 hpg rank : Q,R,S ps Switching Time Test Circuit ta = 28 input ierve 0.6 fi] f ° RB | os Ej R Ri | U 8 . | “F394 “te 00; 470) E: Emitte: Wew? ‘eo -25v { c: collector Dip -D bp2= ke=-BOMA | B: Base Unit (Resistance : 2, Capacitance : F) SANYO: PCP (Bottom View) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 6089MO,TS No.3133-1/3
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Boy |i | | UN NW 3 0.4] Ne, 3° 'fra=25e 1 tt NT WL 2 | || 2 Oe | S single pase JT Tt NNT 8,, Nin, Mounted on ceramic board =} +1 4 [ 250mm? x 0.8mm) a ° 4 10 ) DE © _0 Cy 00 1 140 150 160, Collector to Emitter Voltage,Vog - V Ambient Temperature,Ta — °C {No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO. LTD, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD. its affilates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.3133-3/3