2SA1726 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1726
DESCRIPTION
- Low Collector Saturation Voltage : V CE(sat)= -0.5(V)(Max)@IC= -2A
- High Switching Speed
- Complement to Type 2SC4512
APPLICATIONS
- Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB B Base Collector Current-Continuous -3 A PC Total Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1726
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -0.5 V ICBO Collector Cutoff Current VCB= -80V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -10 μA hFE DC Current Gain IC= -2A ; VCE= -4V 50 180 fT Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -12V 20 MHz COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 150 pF Switching Times ton Turn-on Time 0.18 μs tstg Storage Time 1.10 μs tf Fall Time IC= -3A ,RL= 10Ω, IB1= -IB2= -0.3A,VCC= -30V 0.21 μs hFE Classifications O P Y 50-100 70-140 90-180