2SA1724 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
High fT (fT =1 . 5 G H zt y p ) . High Current (IC = 300mA). Adoption of FBET process. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage V CBO -30 V Collector-Emitter Voltage V CEO -20 V Emitter-Base Voltage V EBO -3 V Collector Current I C -300 mA Collector Current (Pulse) I CP -600 mA PC 500 PC* 1300 Jumction temperature T j 150 Storage temperature Range T stg - 5 5t o+ 1 5 0 * Mounted on ceramic board (250 mm2 x 0.8 mm) Collector Power Dissipation mW Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cut-off Current I CBO VCB = -20V , IE =0 - 0 . 1 ì A Emitter Cut-off Current I EBO VEB =- 2 V,IC =0 - 0 . 1 ì A VCE =- 5 V,IC = -50mA 15 100 VCE =- 5 V,IC = -300mA 5 Collector-Emitter Saturation Voltage V CE(sat) IC = -100mA , IB = -10mA -0.4 -1.0 V Base-Emitter Saturation Voltage V BE(sat) IC = -100mA , IB = -10mA -0.9 -1.2 V Transition Frequency f T VCE =- 5 V,IC = -100mA 1.5 GHz Collector Output Capacitance C ob VCB = -10V , IE = 0 , f = 1MHz 4.9 pF Reverse Transfer Capacitance C re VCB = -10V , IE = 0 , f = 1MHz 4.4 pF DC Current Gain h FE Marking Marking AJ
www.kexin.com.cn2 SMD Type Transistors Electrical Characteristics Curves 2SA1724
www.kexin.com.cn 3 SMD Type Transistors 2SA1724