2SA1687 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Very small-sized package. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -60 V Collector-emitter voltage V CEO -50 V Emitter-base voltage V EBO -15 V Collector current I C -150 A Collector current I CP -300 A Base current I B -30 mA Collector dissipation P C 150 mW Jumction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current Ic BO VCB =- 4 0 V,IE =0 - 0 . 1 ì A Emitter cutoff current I EBO VEB = -120V , IC =0 - 0 . 1 ì A DC current Gain h FE VCE =- 6 V,IC = -1mA 135 600 Gain bandwidth product f T VCE =- 6 V,IC = -1mA 130 MHz Collector-to-emitter saturation voltage V CE(sat) IC =- 5 0 m A,IB =-5mA -0.25 -0.5 V Base-to-emitter saturation voltage V BE(sat) IC =- 5 0 m A,IB =-5mA -0.85 -1.2 V Collector-to-base breakdown voltage V (BR)CBO IC =- 1 0 ì A,IE =0 - 6 0 V Collector-to-emitter breakdown voltage V (BR)CEO IC =- 1 m A,RBE = -50 V Emitter-to-base breakdown voltage V (BR)EBO IE =- 1 0 ì A,IC =0 - 1 5 V Common base output capacitance Cob V CB = -6V , f = 1MHz 3.5 pF Delay time t on 50 ns Storage time t stg 460 ns Fall time t f 60 ns 2SA1687 hFE Classification Marking Rank 5 6 7 hFE 60 120 90 180 135 270 D