2SA1685 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Fast switching speed. High gain-bandwidth product. Low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -40 V Collector-emitter voltage V CEO -20 V Emitter-base voltage V EBO -5 V Collector current I C -150 mA Collector current (pulse) I CP -300 mA Base current I B -30 mA Collector dissipation P C 150 mW Jumction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current Ic BO VCB =- 3 0 V,IE =0 - 0 . 1 ì A Emitter cutoff current I EBO VEB =- 4 V,IC =0 - 0 . 1 ì A DC current Gain h FE VCE =- 1 V,IC = -10mA 60 270 Gain bandwidth product f T VCE =- 1 0 V,IC = -10mA 400 MHz Common base output capacitance Cob V CB = -10V , f = 1MHz 2.9 pF Collector-to-emitter saturation voltage V CE(sat) IC =- 1 0 m A,IB =-1mA -0.07 -0.2 V Base-to-emitter saturation voltage V BE(sat) IC =- 1 0 m A,IB =-1mA -0.75 -1 V Collector-to-base breakdown voltage V (BR)CBO IC =- 1 0 ì A,IE =0 - 4 0 V Collector-to-emitter breakdown voltage V (BR)CEO IC =- 1 m A,RBE = -20 V Emitter-to-base breakdown voltage V (BR)EBO IE =- 1 0 ì A,IC =0 - 5 V Delay time t d 14 20 ns Rise time t r 11 20 ns Storage time t s 80 180 ns Fall time t f 16 25 ns 2SA1685 hFE Classification Marking Rank 3 4 hFE 60 120 90 180 YL