2SA1681

2SA1681_15 KEXIN

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SA1681 ■ Features

• Low saturation voltage
• High speed switching time
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
• Complementary to 2SC4409 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -2 Base Current IB -0.2 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 uA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA，IB=0 -50 Emitter - base breakdown voltage VEBO IE= -100 u A， IC=0 -6 Collector-base cut-off current ICBO VCB= -60 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -6V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-1 A, IB=-50 mA -0.5 Base - emitter saturation voltage VBE(sat) IC=-1 A, IB=-50 mA -1.2 hFE(1) VCE= -2V, IC= -100 mA 120 400 hFE(2) VCE= -2V, IC= -1.5 A 40 Turn-on time ton 0.1 Storage time tstg 0.3 Fall time t f 0.1 Collector output capacitance Cob VCB= -10V,IE=0, f=1MHz 23 pF Transition frequency fT VCE= -2V, IC= -100 mA 100 MHz DC current gain us V uA V ■ Marking Marking L*A −30 V 30 Ω IB2 IB1 20 μs IB1 IB2 −IB1 = IB2 = 0.05 A, DUTY CYCLE ≤ 1% OUTPUT INPUT

www.kexin.com.cn2 Tran sistors PNP Transistors 2SA1681 ■ Typical Characterisitics VCE (sat) – IC VBE (sat) – IC IC – VCE hFE – IC Collector current IC (A) Collector current IC (A) Collector-emitter voltage VCE (V) Collector current IC (A) Collector-emitter voltage VCE (V) Collector current IC (A) Collector current IC (A) Collector-emitter saturation voltage VCE (sat) (V) Base-emitter voltage VBE (V) DC current gain h FE Collector current IC (A) Base-emitter saturation voltage VBE (sat) (V) 0 −6 −2 −1 −2.4 Common emitter Ta = 25°C −1.6 IB = −2 mA −5 −3 −2.0 −1.2 −0.4 −100 −70 −20 −50 −10 −30 −0.8 −15 −1 m 500 −10 m −300 m −3 m 300 Common emitter VCE = −2 V −30 m −100 m Ta = 100°C 100 −25 −1 −3 −1 m −10 −10 m −300 m −3 m Common emitter IC/IB = 20 −30 m −100 m −10 m Ta = 100°C −25 −1 −3 −30 m −50 m −100 m −300 m −500 m −0.3 −0.1 Ta = −25°C 100 −1 m −10 m −300 m −3 m −30 m −100 m −1 −3 −0.5 Common emitter IC/IB = 20 Safe Operating Area IC – VBE −1.2 −0.4 Common emitter VCE = −2 V −1.6 −0.8 −2.0 −1.2 Ta = 100°C 25 −25 −100 m −3 −300 m −3 m −100 m −10 *: Single no repetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Tested without a substrate. −500 m DC operation (Ta = 25°C) −10 m −300 m −10 −5 m −30 m −50 m IC max (pulse)* IC max (continuous) 100 ms* 10 ms* 1 ms* VCEO max −100−30