2SA1657 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1657
DESCRIPTION
- Collector-Emitter Breakdown Voltage VCEo=-150V(Min)
- Complement to Type 2SC4368
- Full-mold package that does not require an insulating board or bushing when mounting.
APPLICATIONS
- Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) I SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC= 25 'C Collector Power Dissipation @Ta= 25r Junction Temperature Storage Temperature VALUE -150 -150 -5.0 -1.5 -0.5 150 -55-150 UNIT V V V A A W PIN 1.BASE 2.COLLECTOR 3. BETTER TO-220F package B ; jo F I \\ - - - - D - N - H K DIM A B C D F H J K L N a R s u - c - -s- u - R- J - - mm MIN 14.95 10.00 4.40 0.75 3.10 3.70 0.50 13.4 1.10 5.00 2.70 2.20 2.65 6.40 MAX 15.05 10.10 4.60 0,90 3.30 3.90 0.70 13.6 1.30 5.20 2.90 2.40 2.9O 6.60 A NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SA1657
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) ICBO IEBO HFE COB fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -10mA; IB=0 lc= -500mA; IB= -50mA VCB=-120V; le=0 VEB= -5V; lc= 0 lc= -500mA; VCE= -10V lE=0;VCB=-10V;f= 1.0MHz lc=-500mA;VcE=-10V MIN -150 TYP. MAX -1.5 -10 -10 140 UNIT V V uA u A PF MHz