2SA1657 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA1657
DESCRIPTION
- Collector-Emitter Breakdown Voltage VCEO= -150V(Min)
- Complement to Type 2SC4368
- Full-mold package that does not require an insulating board or bushing when mounting.
APPLICATIONS
- Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1.5 A IB Base Current-Continuous -0.5 A PC Collector Power Dissipation @TC= 25℃ 20 W Collector Power Dissipation @Ta= 25℃ 2 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA1657
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -150 V VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.5 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -10 μ A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μ A hFE DC Current Gain IC= -500mA; VCE= -10V 40 140 COB Output Capacitance IE=0; VCB= -10V; f= 1.0MHz 55 pF fT Current-Gain—Bandwidth Product IC= -500m A; VCE= -10V 4 MHz