2SC4363 SANYO
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Technical content
Ordering number: EN 2809 2SA1656/2SC4363 ES PNP/NPN Epitaxial Planar Silicon Transistors ati Switching Applications [eee (with Bias, Resistance) Applications és ¥ es ‘se + Switching circuit, inverter circuit, interface circuit, driver circuit Jf ge rs Features ff & th - + On-chip bias resistance (Rl =4.7kQ, R2=4.7kQ) i Hy ee ( ):28A1656 AE sexing ff Absolute Maximum Ratings at Ta= 25°C ff & ae anit Collector to Base Voltage Voso é . by (—)50," Vv Collector to Emitter Voltage Vogo oe CRW (350 v Emitter to Base Voltage Veso if . ‘ AZ 6 Vv Collector Current Ig a eres Collector Current (Pulse) lop A & &. f-)200 mA Collector Dissipation Po oe =< e wo fe 300 mW Junction Temperature Tj og oe’ “ND fe 150 °C Storage ''emperature Tstg if a <65to+150 °C Electrical Characteristics at Ta = 25°C f é Si s ve min typ max unit Collector CutoffCurrent Icpo Von #(4)40¥ 1c =O, ff (-)0.1 pA Collector CutoffCurrent Icgo Vor =(—)40ViIy= 0° af (-)0.5 pA Emitter CutoffCurrent — Teno Ven=(—J5Vac=0" (409 (-)532(-)758 A DC Current Gain hee NeE= (TV oS —)19mA 30 Gain-Bandwidth Product fy J New= (3M 0Vilo=(~)5mA 260 MHz Ff Re “fF (200) MHz Output Capacitance Cb fe Vite (Q0V (= MHz 3.7 pr C-E Saturation Voltage — Voxieany Sloe 10mAiig=(—0.5mA (~)0.1 (-)0.3 Vv C-B Breakdown Voltage Viykicng®” Teg. (=)10pAJe=0 (-)50 Vv C-E Breakdown Voltage Véanjced %,lo=t—)100¢A, Rpg = (—)60 Vv Input OFF-State Voltage” Viomiy, Yew =(-)8V Ic =(—)100pA (—)0.9(-)1.15 (—)1.4 Vv Input Resistance Ra oe 3304647 61 kQ Resistance Ratio "TARA 1.0 ff gets Case Outline 2033 Electrical Conriection’ “3 (unit: mm) of coureur éé foutrury ea a rm Ne BI fe az Br Base “Nal i¢ C: Collector ane Os E: smitter Emitter Emit ca} (ow) SANYO: SPA 2SA,1656(PNP) 2$C4363(NPN) Specifications and information herein are subject to change without notice. SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 721 BTA,TS No.2809-1/2
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