2SC4361 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
[eee PNP/NPN Epitaxial Planar Silicon Transistors Ree Switching Applications [ieee (with Bias-Resistance) Applications . a ee - Switching circuit, inverter circuit, interface circuit, driver circuit ff @. a oe Features ff os Ye - ff - On-chip bias resistance (R1 = 4.7kQ, R2=10kQ) éé ae fa Absolute Maximum Ratings at Ta = 25°C if, se“ oe unit Collector to Base Voltage Vcpno ff “Ay b (+150 v Collector to Emitter Voltage = Vcro Aé mW" 50 OV Emitter to Base Voltage Veno Pen rn es ee Collector Current Io ff ga. Yee fo A-)100 mA Collector Current (Pulse) Igp ff & “Se “ff (~)200 mA Collector Dissipation Po of a “ Qf 300 mW Junction Temperature Tj fo LO ff 150 °C Storage ‘Temperature Tstg ff ae if ~ Bb to +150 °c Electrical Characteristics at ‘Ta= 25°C FP gy A min typ max unit Collector Cutoff Current Igpo Von #(—)40V tis 0 ff (~)0.1 pA Collector CutoffCurrent Iceo ¥oe=(—)40¥j1p20 oe (-)0.5 pA Emitter CutoffCurrent — Iepo Vep=(@)6¥,Ic=0 (—)262 (—)340(-)485 pA DC Current Gain hee fe Neoux(2)6V de= (=y10mA 50 Gain-Bandwidth Product fr 2S Vop=ts)10V,[¢=(2)5mA 250 Miz ff 9 44 (200) MHz Output Capacitance Cop Veg =68)10V P51 MHz 3.7 pr fe ne ee P C-E Saturation Voltage — ¥eeisav, %, Hae (— mAs = (—)0.5mA (~)0.1 (-)03 0 V C-B Breakdown Voltage Viscad Ac =(—)10pA Te=0 (60 Vv C-E Breakdown Voltage,” Veprisicdss, Ic=(—M00pA,Rpe= © (—)50 Vv Input OF F-State Voltage” Visi, “Von 5(#)5V Io=(—)100pA (=)0.7(—)0.85(—)0.96 v Input ON-State Voltage —Vigom, , VowS(—)0.2Vilo=(—)l0mA (—)0.95 (=)1.3 (20 -V Input Resistance Ri ff 33° #47 61 kQ Resistance Ratios RUBE oe 0.47 ff & ta! ff Case Outline 2033 Electrical Confection fF (unit: mm) oe Ceuta & Lotlector 0 re Of (OMTRUER & stoureur) Ip 8 | fé fees ‘i tin SE Te fe CNPUTDP sf CaNedr) 3 a eee ee Rz Br Base . > €: Collector “so. Gulf E: Emitter Emitters” Emitter {ono} (oxo) SANYO: SPA 25A1654(PNP) 28C4361(NPN) Specifications and information herein are subject to change without notice. SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 9288MO, TS No.2807-1/2
2SA1654/2SC4361 —— van eres Ty = 7 POO ye hs — teed | 7S] Stoo HY AL —— F} Saaremaa & ttt ett 24-4 Het | sity fa poe | | meeps |
0 Collector Currentilc ~ mA oe ee Ta — |_|
i cee dee YAY TZ | tern eet PPL if F i °° Aunbient Temporature,Ta —
1.0 Cotecter Currene 7 > WA
lL oN) — &) if