2SA1615-Z ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconPNPPowerTransistor 2SA1615-Z

DESCRIPTION

  • Largecurrentcapacity:IC(DC)=-10AIC(pulse)=-15A
  • High hFE andlowsaturationvoltage: hFE=200min(VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(IC=-4A,IB=-0.05A)
  • 100% avalanche tested
  • Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation

APPLICATIONS

  • The2SA1615isavailable forthelarge currentcontrol insmalldimensiondue tothe lowsaturationandis idealforhigh efficiencyDC/ACconverters dueto thefastswitchingspeed ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -30 V VCEO Collector-EmitterVoltage -20 V VEBO Emitter-BaseVoltage -10 V IC CollectorCurrent-Continuous -10 A ICM CollectorCurrent-Peak -15 A PC CollectorPowerDissipation @TC=25℃ 15 WCollectorPowerDissipation @Ta=25℃ 1.0 TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃

isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPPowerTransistor 2SA1615-Z ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat)NOTE Collector-EmitterSaturationVoltage IC=-4A;IB=-50mA -0.25 V VBE(sat)NOTE Base-EmitterSaturationVoltage IC=-4A;IB=-50mA -1.2 V ICBO CollectorCutoffCurrent VCB=-20V;IE=0 -1.0 μA IEBO EmitterCutoffCurrent VEB=-8V;IC=0 -1.0 μA hFE-1NOTE DCCurrentGain IC=-0.5A;VCE=-2V 200 600 hFE-2NOTE DCCurrentGain IC=-4A;VCE=-2V 160 COB OutputCapacitance IE=0;VCB=-10V;f=1.0MHz 220 pF fT Current-Gain—BandwidthProduct IC=-1.5A;VCE=-5V 180 MHz NOTE:PulsetestPW≤350us,dutycycle≤2%  hFE-1 Classifications L K 200-400 300-600