2SA1611_15 KEXIN

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  • Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SA1611 ■ Features

  • High DC Current Gain
  • High Voltage
  • Complementary to 2SC4177 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -100 mA Collector Power Dissipation PC 150 mW Thermal Resistance From Junction To Ambient RθJA 833 ℃/W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA，IB=0 -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -60 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=-10 mA -0.3 Base - emitter saturation voltage VBE(sat) IC=-100 mA, IB=-10 mA -1.2 Base - emitter voltage VBE VCE= -6V, IC= -1mA -0.58 -0.68 DC current gain (Note.1) hFE VCE= -6V, IC= -1mA 90 600 Collector output capacitance Cob VCB= -10V,IE=0, f=1MHz 4.5 pF Transition frequency fT VCE= -6V, IC= -10mA 180 MHz V uA V Note.1: Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%. ■ Classification of hfe Type 2SA1611-M4 2SA1611-M5 2SA1611-M6 2SA1611-M7 Range 90-180 135-270 200-400 300-600 Marking M4 M5 M6 M7 1.Base 2.Emitter 3.Collector

www.kexin.com.cn2 Transistors PNP Transistors 2SA1611 ■ Typical Characterisitics -0.1 -1 -10 -100 100 200 300 -1 -10 -100 -10 -100 -0.1 -1 -10 -1 -10 -100 200 0 25 50 75 100 125 150 100 150 200 -0.1 -10 -100 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 -0 -2 -4 -6 -8 -10 fT — — IC hFE — — COMMON EMITTER VCE=-6V -3 -30-0.3 Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) IC Ta=25℃ -30 -300 -30-0.3 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) β=10 Ta=100℃ ICVCEsat —— -500 -3-0.3 -20 Cob Cib REVERSE VOLTAGE V (V) f=1MHz IE=0/IC=0 Ta=25℃ VCB/ VEBCob/ Cib — — CAPACITANCE C (pF) 300 100 -3 -30 VCE=-6V Ta=25℃ TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) Ta COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta ( )℃ PC —— VBEIC —— -30 -0.3 Ta=25℃ Ta=100℃ COMMON EMITTER VCE=-6V COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) -0.5 -30-0.2 β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) Ta=25℃ Ta=100℃ ICVBEsat — — Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) -20uA -18uA -16uA -14uA -12uA -10uA -8uA -6uA -4uA IB=-2uA COMMON EMITTER Ta=25℃