2SA1608_15 KEXIN

Document overview

www.kexin.com.cn 1 Transistors PNP Transistors 2SA1608 ■ Features

High fT : fT=400MHz
Complementary to 2SC3739 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -40 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA，IB=0 -40 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -40 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB=-50 mA -0.45 -0.75 Base - emitter saturation voltage VBE(sat) IC=-500 mA, IB=-50 mA -1 -1.3 hFE(1) VCE= -2V, IC= -150mA 75 140 300 hFE(2) VCE= -2V, IC= -500mA 20 50 Turn-on time ton 25 Storage time tstg 70 Turn-off time toff 100 Collector output capacitance Cob VCB= -10V,IE=0, f=1MHz 5 8 pF Transition frequency fT VCE= -10V, IC= -20mA 150 400 MHz DC current gain (Note.1) Vcc=-30V,IC=-150mA, IB1=-IB2=-15mA ns V uA V ■ Classification of hfe (1) Type 2SA1608-Y12 2SA1608-Y13 2SA1608-Y14 Range 75-150 100-200 150-300 Marking Y12 Y13 Y14 1.Base 2.Emitter 3.Collector

www.kexin.com.cn2 Transistors PNP Transistors 2SA1608 ■ Typical Characterisitics

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SA1608 ■ Typical Characterisitics