2SA1606 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

J , O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1606

DESCRIPTION

  • High Collector-Emitter Breakdown Voltage- V(BR)CEo=-160V(Min)
  • Large Current Capacity
  • Complement to Type 2SC4159

APPLICATIONS

  • Designed for high-voltage switching, AF power amplifier, 100W output predrivers. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-220F package SYMBOL VCBO VCEO VEBO Ic I CM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -180 -160 -6.0 -1.5 150 -55-150 UNIT V V V A A W B ; t \\Q r \\ L - - . - Q - H - H K DIM A B C D F H J K L N q R s u - c - -s- u - R- J - - mm WIN 14.95 10.00 4.40 0.75 3.10 3.70 0.50 13.4 1.10 5.00 2.70 2.20 2.65 6.40 MAX 15.05 10.10 4.60 0.90 3.30 3.90 0.70 13.6 1.30 5.20 2.90 2.40 2.90 6.60 A NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Silicon PNP Power Transistor 2SA1606

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VcE(sat) VBE(on) ICBO IEBO hFE fr COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc=-1mA; IE=0 lc=-1mA; RBE= °° |E=-1mA;lc=0 lc= -500mA; IB= -50mA lc=-10mA;VCE=-5V VCB=-120V; IE=0 VEB= -4V; lc= 0 lc= -300mA; VCE= -5V lc=-50mA;VCE=:10V lE=0;VCB=-10V;f= 1.0MHz MIN 180 160 TYP. -0.5 100 MAX -1.5 -10 -10 200 UNIT V V V V V u A MA MHz PF Switching Times ton tstg tf Turn-on Time Storage Time Fall Time Ic- -0.5A, RL- 400 , lui= -IB2= -50mA, Veer -20V; Pw= 20u s 0.29 0.48 0.19 u s M s u s Classifications D 60-120 E 100-200