2SA1606 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA1606
DESCRIPTION
- High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V (Min)
- Large Current Capacity
- Complement to Type 2SC4159
APPLICATIONS
- Designed for high-voltage switching, AF power amplifier, 100W output predrivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6.0 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3 A PC Total Power Dissipation @ TC=25℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA1606
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 180 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ 160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -0.5 V VBE(on) Base-Emitter On Voltage IC= -10mA; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -10 μ A IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -10 μ A hFE DC Current Gain IC= -300mA; VCE= -5V 60 200 fT Current-Gain—Bandwidth Product IC= -50mA ; VCE= -10V 100 MHz COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz 30 pF Switching Times ton Turn-on Time IC= -0.5A, RL= 40Ω , IB1= -IB2= -50mA, VCC= -20V; PW= 20μ s 0.29 μ s tstg Storage Time 0.48 μ s tf Fall Time 0.19 μ s hFE Classifications D E 60-120 100-200