2SA1592 SANYO
Document overview
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Technical content
Features
» Adoption of FBET, MBIT processes + High breakdown voltage and large current capacity . Fast switching speed + Small and slim package permitting 2SA1592/2SC4134-applied sets to be made more compact ( ): 28A1592 Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vox (-)120 0 V Collector to Emitter Voltage Vero (-) 100 v Emitter to Base Voltage Vepo (-)6 v Collector Current Ig (-)1 A Collector Current(Pulse) Icp (-)2 0A Collector Dissipation Po 0.8 W Te=25°C 10 OW Junction Temperature 73 150% Storage Temperature Tstg =55 to +150 °% Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Ippo Vop=(-) 100V,1,=0 (-)100 nA Emitter Cutoff Current Ingo Vppe(-)4V,1¢=0 (-)100 nA DC Current Gain hep Vog=(-)5V,Io=(-)100mA 100* 4oo* Gain-Bandwidth Product fp Voge (-) 10V,I¢=(—) 100mA 120 MHz Output Capacitance COD Vop=(-) 10V, f= MHz (13) pF 8.5 Continued on next page. *: The 2SA1592/2SC4134 are classified by 100mA hpp as follows:
100 R 200 140 S 280 [200 T 400 | T 400
: Package Dimensions 2045B Package pimensions 2044B (unit:mm) 6.5_. 2-3 (unit: mm) rr : 7 fates pao rt] mel 0.850 5, : ge os 1: Base er cma 2: Collector 123 1:Bene 3: Emitter 2: Collector 4:Collector 2S) a: emitter SANYO: TP-FA 4: Collector hat SANYO: TP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 8219MO/4097TA,TS No.2510-1/4
_2SA1592/2SC4134 Oe Continued from preceding page. min typ max unit C-E Saturation Voltage Vop(sat) Ic=(-)400mA,Ip=(-)4OmA (-0.2)(-0.6) 4 B-E Saturation Voltage Vgg(sat) I=(-)4O0mA,Ip=(-)4OmA (=)0.85(-)1.2 C-B Breakdown Voltage V(prycRo Ic=(-)10pA, Ip=0 (-)120 v C-E Breakdown Voltage V(BR)CEO To=(~) imA,R ET OO (-) 100 Vv E-B Breakdown Voltage V(pr)rpo Ta=(~) 10a, be=0 (-)6 v Turn-on Time ton See specified Test Circuit. (80) ns " ns Sti Tim t (700) onege ue ste " 850 ns Fall Time te " (40) ns " 50 ns Switching Time Test Circuit Pwe20us It, ece ra /P ° YR RL wl ab 8, By Unit Resistance : 0, Capacitance : F) iy =-g= f= soma (For PNP, the polarity is reversed.) 10 Ic _- Ve to I¢_- Vee . “ CTT wen « = < | TB ee = a LL BPD ta FS il (Eo me a, Peer R-06 0.6 am Ora EP aoe ear oe Ae Ae ee Oe ee a Zee eee ee [on Zee gs Weert TTT 8°" veery TT TT ALT TTT feo TT | ol i tT ieg TTP ° cortestor to Fnttter Voltage, Vog -v ° collector to Emitter Youtage, Von -v * ai "OCT Lee] A ucn pete ey eee ne ee 4s | a a a P solft | set | Tg, [fess ee 2c e/a Er | é oa 7 ae See | 6 |f | | roma Tt e ert tT rrr) e wey tT errr ey Oe eS ee ey ; dq a Cit] [Ti TTT 8 Aaa +} tH § CET tee TTT oh 1 | tesco | TT TT | = - = - - ° Mi 20 30 40 50 * cortestor to Balter Voltage, Vop -v” Collect? to" Hult tar Voltage ,Vog - V No.2510-2/4
2SA1592/2SC4134 . : 2 ig We 2504134 LTT vee) via nnn LE oH SUA Ss, oT . i Hi Pet nie ple, HH Cree raee CO) CCC a aaa i 504 TT Coy Er ; FETE y PTT AL ‘ “ LA LL ° 06 08 1.0 v 1.2 an z = ty 0 ° pase to Emitter Vottage. Yop ~ *o ae aed p Voltage, Vgp = \\V ter Vouts - — a T “7 Veresv eee oo “ee : aed po : : Saye st SS
2 DEBS j (eee ann
3” eee Pao =e gf ee tH : TOS Tore
2 Hoe CAT Wo ott
tt 7 S79 2 3 "Too "age oornt Tg = vs "Soest fig = & ~ Vpe(sat) - 4134 “0 T_] 2SA1 g , -- sels ora # OOo Too oo g TOTP é | | 2. : fe topo 7] sain i 7 Soa NICO eC as Cro ei ee i reser] yf re PUT C i Teper te #* TRAP ° Mild 37 2 To.01 ‘Collecton Current, Tg -A am n tor Beat i “” Vce(sat) - cats - hry anise _ ere Tc/ 1 e210 : Foe i Fee : Wo at iim i : fe oF Hoy Poni iat TA a § 7 LA te tH Ti] 8 tee 25 y ge lyase ie ae reemeeee cd TE Hitt i se, O01 *cottestar anneal df= & TE catctor Cuments eA tototottumrent ag = a?
s fT - Ic to cob - VCB * . a I] 2501592/2504134 Ty] TT IT [esttssevescaisa
2 Vce=10 a7 fe tk
' ees toy att Ty i | feikee e f : Seas sit itt Tt dt gm Ss < e a Bett TTA pio re Presto PTS ose | g a Ss 9 10 — elLE iT TT TT) aS Pa oss 7 : zi, TTT yy A : a I 4 | 3 8 0 (For PNP, minus sign is omitted.) é 1 (For PNP, minus sign is omitted.) 0.01 23 3 O4 3 7 1.0 74.0 273 ST to 23 STi 2 Collector Current,Ip - A Collector to Base Voltage, Von ~ V
1 ASO 0 Pc - Ta
cr L++his | TTT) = |_| 2841592/2804134 tole NRT) t, ES EN 2 FS Pe IN PRS POON oo PoP Oe EAT oe. re A <g NY s Cee IN B | to=25°C pri es IW] sg * & [Single puise [Sse 3 N Q@ | 2saisg2/2scars4 a2 r Scaler aw sine inl | 2 Dd INO Ki is omitted.) ee a 0 FE et IN 71490 2 3 S57 2°39 ST ay 2 0 2 40 60 80 100 120 140 160 Collector to Emitter Voltage, Vo - V Ambient Temperature,Ta ~ °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power contro! systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. W Anyone purchasing any products described or contained herein for an above-mentioned use shall © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any ‘ and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or ligation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.2510=4/4_