2SA1587_15 KEXIN

Document overview

www.kexin.com.cn 1 Transistors PNP Transistors 2SA1587 ■ Features

High voltage
Low noise
Complementary to 2SC4117
Small Package ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -100 Base Current IB -20 Collector Power Dissipation PC 100 mW Junction Temperature TJ 125 Storage Temperature range Tstg -55 to 125 V mA ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -120 Collector- emitter breakdown voltage VCEO Ic= -1 mA，IB=0 -120 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -120 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-10 mA, IB=-1 mA -0.3 Base - emitter saturation voltage VBE(sat) IC=-10 mA, IB=-1 mA -1.2 DC current gain hFE VCE= -6V, IC= -2mA 200 700 Noise figure NF VCE= -6V, IC= 0.1mA,f=1KHz,Rg=10KΩ 1 10 dB Collector output capacitance Cob VCB= -10V,IE=0, f=1MHz 4 pF Transition frequency fT VCE= -6V, IC= -1mA 100 MHz V uA V ■ Classification of hfe Type 2SA1587-G 2SA1587-L Range 200-400 350-700 Marking CG CL 1.Base 2.Emitter 3.Collector

www.kexin.com.cn2 Transistors PNP Transistors 2SA1587 ■ Typical Characterisitics

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SA1587 ■ Typical Characterisitics