2SA1586_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SA1586 ■ Features

  • High DC Current Gain
  • High Voltage and High Current.
  • Complementary to 2SC4116
  • Small Package ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -150 mA Collector Power Dissipation PC 100 mW Thermal Resistance From Junction To Ambient RθJA 1250 ℃/W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -50 Collector- emitter breakdown voltage VCEO Ic= -1 mA，IB=0 -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -50 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=-10 mA -0.3 Base - emitter saturation voltage VBE(sat) IC=-100 mA, IB=-10 mA -1.2 DC current gain hFE VCE= -6V, IC= -2mA 70 400 Collector output capacitance Cob VCB= -10V,IE=0, f=1MHz 7 pF Transition frequency fT VCE= -10V, IC= -1mA 80 MHz V uA V ■ Classification of hfe 1.Base 2.Emitter 3.Collector Type 2SA1586-O 2SA1586-Y 2SA1586-G Range 70-140 120-240 200-400 Marking SO SY SG

www.kexin.com.cn2 Transistors PNP Transistors 2SA1586 ■ Typical Characterisitics -0 -300 -600 -900 -1200 -0.1 -10 -100 001-01-1-1.0- -300 -600 -900 -1200 0 25 50 75 100 125 150 100 120 001-01-1-1.0- -10 -100 -1000 001-01-1-1.0- 100 1000 01-1-1.0- -10 001-01-1- 100 COMMON EMITTER VCE= -6V VBEIC —— BASE-EMMITER VOLTAGE VBE (mV) COLLECTOR CURRENT IC (mA) T a=25℃ Ta=100℃ -150 β=10 ICVBEsat —— BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURREMT IC (mA) Ta=100 ℃ Ta=25℃ -150 PC —— Ta AMBIENT TEMPERATURE Ta ( )℃ COLLECTOR POWER DISSIPATION PC (mW) Ta=100 ℃ Ta=25℃ β=10 ICVCEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURREMT IC (mA) -150 -0.3 300 -30 -30-0.3-0.3 -3 -30 -30 -300 300 IChFE —— Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE= -6V -150-0.3 -3 -30 3-3.0- f=1MHz IE=0/IC=0 Ta=25 ℃ VCB/VEBCob/Cib —— Cob Cib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) -20 COMMON EMITTER Ta=25℃ -50uA -45uA -40uA -35uA -30uA -25uA -20uA -15uA -10uA IB=-5uA COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) Static Characteristic -30 COMMON EMITTER VCE=-10V Ta=25℃ COLLECTOR CURRENT IC (mA) TRANSITION FREQUENCY fT (MHz) 500 ICfT ——