2SA1580_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 1
Technical content
Features
High fT. Small reverse transfer capacitance. Adoption of FBET process. Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP Vegatlovesab-rotcelloC CBO -70 V Vegatlovrettime-rotcelloC CEO -60 V Vegatlovesab-rettimE EBO -4 V ItnerrucrotcelloC C -50 mA I)eslup(tnerrucrotcelloC cp -100 mA PnoitapissidrotcelloC C 200 mW TerutarepmetnoitcnuJ j 150 TerutarepmetegarotS stg -55 to +150 Electrical Characteristics Ta = 25 PNP Transistors 2SA1580 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -70 Collector- emitter breakdown voltage VCEO Ic= -1 mA， R BE = -60 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -4 Collector-base cut-off current ICBO VCB= -40 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -3V , IC=0 -1 Collector-emitter saturation voltage VCE(sat) IC=-20mA, IB=- 2mA -0.6 Base - emitter saturation voltage VBE(sat) IC=-20mA, IB=- 2mA -1 DC current gain hFE VCE= -10, IC= -10mA 60 270 Base-collector time constant rbb,Cc VCE= -10V, IC= 10mA 8 ps Reverse transfer capacitance Cre VCB= -10V, f=1MHz 1.3 Output capacitance Cob VCB= -10V, f=1MHz 1.7 Transition frequency fT VCE= -6V, IE= 10mA 180 MHz V uA V pF ■ Classification of hfe
- Complementary to 2SC4104 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 1. Base 2. Emitter 3. Collector 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 Type 2SA1580-QL3 2SA1580-QL4 2SA1580-QL5 Range 60-120 90-180 135-270 Marking QL3 QL4 QL5