2SA1580 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 1
Technical content
Features
High fT. Small reverse transfer capacitance. Adoption of FBET process. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -70 V Collector-emitter voltage V CEO -60 V Emitter-base voltage V EBO -4 V Collector current I C -50 mA Collector current (pulse) I cp -100 mA Collector dissipation P C 200 mW Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO VCB = -40V, IE=0 -0.1 ìA Emitter cutoff current I EBO VEB =- 3 V ,IC=0 -1 ìA DC current gain h FE VCE = -10V , IC = -10mA 60 270 Gain bandwidth product f T VCE = -10V , IC = -10mA 350 700 MHz Base-collector time constant r bb,cc VCE = -10V , IC = -10mA 8 ps Output capacitance C ob VCB = -10V , f = 1.0MHz 1.7 pF Reverse transfer capacitance C re VCB = -10V , f = 1.0MHz 1.3 pF Collector-emitter saturation voltage V CE(sat) IC = -20mA , IB = -2mA -0.6 V Base-emitter saturation voltage V BE(sat) IC = -20mA , IB =- 2 m A - 1 V Collector-base breakdown voltage V (BR)CBO IC = -10ìA , IE =0 - 7 0 V Collector-emitter breakdown voltage V (BR)CEO IC =- 1 m A,RBE = -60 V Emitter-base breakdown voltage V (BR)EBO IE = -10ìA , IC =0 - 4 V hFE Classification Marking Rank 3 4 5 hFE 60 120 90 180 135 270 QL