2SA1579_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SA1579 ■ Features

  • High breakdown voltage. (BVCEO = -120V)
  • Complements the 2SC4102. ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 mA Collector Power Dissipation PC 100 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -50 μA， IE=0 -120 Collector- emitter breakdown voltage VCEO Ic= -1 mA，IB=0 -120 Emitter - base breakdown voltage VEBO IE= -50μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -100 V , IE=0 -0.5 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.5 Collector-emitter saturation voltage VCE(sat) IC=-10 mA, IB=-1 mA -0.5 Base - emitter saturation voltage VBE(sat) IC=-10 mA, IB=-1 mA -1.2 DC current gain hFE VCE= -6V, IC= -2mA 180 560 Collector output capacitance Cob VCB= -12V,IE=0, f=1MHz 3.2 pF Transition frequency fT VCE= -12V, IC= -2mA,f=30MHz 140 MHz V uA V ■ Classification of hfe 1.Base 2.Emitter 3.Collector Type 2SA1579-R 2SA1579-S Range 180-390 270-560 Marking RR RS

www.kexin.com.cn2 Transistors PNP Transistors 2SA1579 ■ Typical Characterisitics -1 -10 100 -0.1 -1 -10 -200 -400 -600 -800 -1000 0 25 50 75 100 125 150 100 150 -0.1 -1 -10 -10 -100 -1000 -0.1 -1 -10 100 1000 -0.1 -1 -10 100 -0 -200 -400 -600 -800 -1000 -0.1 -10 -30 -50 ICfT —— COMMON EMITTER VCE=-12V Ta=25℃ COLLECTOR CURRENT IC (mA) TRANSITION FREQUENCY fT (MHz) 200 -50 β=10 ICVBEsat —— BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURREMT IC (mA) Ta=100 ℃ Ta=25℃ PC —— Ta AMBIENT TEMPERATURE Ta ( )℃ COLLECTOR POWER DISSIPATION PC (mW) -50 -50 Ta=100 ℃ Ta=25℃ β=10 ICVCEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURREMT IC (mA) IChFE —— Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE= -6V -30 f=1MHz IE=0/IC=0 Ta=25 ℃ VCB/VEBCob/Cib —— Cob Cib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (mV) IC —— VBE T a=25℃ T a=100℃ COMMON EMITTER VCE=-6V Static Characteristic COMMON EMITTER Ta=25℃ COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) -20uA -18uA -16uA -14uA -12uA -10uA -4uA -6uA -8uA IB=-2uA