2SA1037AK ROHM

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2SA1037AK / 2SA1576A / 2SA1774 / Transistors 2SA2029 / 2SA933AS General Purpose Transistor (−50V, −0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS !Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. !!!!Structure Epitaxial planar type. PNP silicon transistor !!!!External dimensions (Units : mm) 2SA1037AK Abbreviated symbol : F ∗ Abbreviated symbol : F ∗ Abbreviated symbol : F ∗ ∗ Denotes hFE Abbreviated symbol : F ∗ ROHM : SMT3 EIAJ : SC-59 (3) Collector (1) Emitter (2) Base Each lead has same dimensions 0.8 0.15 0to0.1 0.3to0.6 1.1 (2) (1) 2.8 1.6 0.4 (3) 2.9 1.9 0.95 0.95 2SA1774 ROHM : EMT3 EIAJ : SC-75A (3) Collecto (1) Emitter (2) Base 0.7 0.15 0.1Min. 0.55 0to0.1 0.2 1.6 1.6 1.0 0.3 0.8 (2) 0.5 0.5(3) 0.2(1) 2SA1576A ROHM : UMT3 EIAJ : SC-70 (3) Collector (1) Emitter (2) Base Each lead has same dimensions 1.25 2.1 0.30.15 0to0.1 0.1to0.4 (3) 0.9 0.7 0.2 0.65 (2) 2.0 1.3 (1) 0.65 2SA2029 ROHM : VMT3 EIAJ : 2SA933AS ROHM : SPT EIAJ : SC-72 0.45 2.5 (1) (2) (3) (3) Base (1) Emitter (2) Collector (15Min.) 3Min. Taping specifications 0.450.5 (1) Base (2) Emitter (3) Collector 0to0.1 (3) 0.32 0.8 1.2 0.13 0.5 0.22 0.4 0.4 1.2 0.80.2 0.15Max. 0.2 (2) (1)

2SA1037AK / 2SA1576A / 2SA1774 / Transistors 2SA2029 / 2SA933AS !!!!Absolute maximum ratings (Ta=25°C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Parameter V CBO VCEO VEBO IC PC Tj Tstg −60 V V V A (DC) −50 −0.15 W 0.2 0.15 0.3 2SA1037AK, 2SA1576A 2SA2029, 2SA1774 2SA933AS 150 55~+150 Symbol Limits Unit !!!!Electrical characteristics (Ta=25°C) Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Parameter Symbol BV CBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. −60 −50 120 140 4.0 −0.1 −0.1 560 −0.5 5.0 VI C=−50µA IC=−1µA IE=−50µA VCB=−60V VEB=−6V VCE=−6V, IC=−1mA IC/IB=−50mA/−5mA VCE=−12V, IE=2mA, f=30MHz VCB=−12V, IE=0A, f=1MHz V V µA µA V MHz pF Typ. Max. Unit Conditions !!!!Packaging specifications and hFE Package Code Taping Basic ordering unit (pieces) QRS hFE 2SA1037AK T146 3000 −QRS2SA1576A T106 3000 TL 3000 −QRS2SA1774 − − T2L 8000 −QRS2SA2029 −− −QRS2SA933AS −−− TP 5000Type hFE values are classified as follows: Item Q R S hFE 120~270 180~390 270~560

2SA1037AK / 2SA1576A / 2SA1774 / Transistors 2SA2029 / 2SA933AS !!!!Electrical characteristic curves Fig.1 Grounded emitter propagation characteristics −0.2 COLLECTOR CURRENT : Ic (mA) −50 −20 −10 −0.5 −0.2 VCE=−6V BASE TO EMITTER VOLTAGE : VBE (V) Ta=100˚C 25˚C −40˚C Fig.2 Grounded emitter output characteristics (I) −0.4 −1.20 −10 −0.8 −1.6 −2.0 −3.5µA −7.0 −10.5 −14.0 −17.5 −21.0 −24.5 −28.0 −31.5 IB=0 Ta=25˚C −35.0 COLLECTOR CURRENT : IC (mA) COLLECTOR TO MITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics (II) −40 −80 −20 −60 −100 IB=0 Ta=25˚C COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) −50µA −100 −150 −200 −250 −500 −450 −400 −350 −300 Fig.4 DC current gain vs. collector current (I) 500 200 100 DC CURRENT GAIN : hFE Ta=25˚C VCE=−5V −3V −1V COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current (II) 500 200 100 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) VCE=−6V Ta=100˚C −40˚C 25˚C Fig.6 Collector-emitter saturation voltage vs. collector current (I) −0.1 −0.5 −0.2 −0.05 Ta=25˚C COLLECTOR CURRENT : IC (mA) IC/IB=50 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.7 Collector-emitter saturation voltage vs. collector current (II) −0.1 −0.5 −0.2 −0.05 COLLECTOR CURRENT : IC (mA) lC/lB=10 Ta=100˚C 25˚C −40˚C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.8 Gain bandwidth product vs. emitter current 50 1000.5 20 100 200 500 1000 12 5 1 0 EMITTER CURRENT : IE (mA) TRANSITION FREQUENCY : fT (MHz) Ta=25˚C VCE=−12V Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −0.5 −20 −1 −2 −5 −10 Cib Cob Ta=25˚C f=1MHz IE=0A IC=0A