2SA1575 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
Features
High fT.. High breakdown voltage. Small reverse transfer capacitance and excellent. High-frequency characteristic. Adoption of FBET process. Absolute Maximum Ratings TA=25 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO -200 V Collector-emitter voltage (Base open) V CEO -200 V Emitter-base voltage (Collector open) V EBO -4 V Collector current I C -100 mA Collector current (pulse) I CP -200 mA Collector power dissipation P C 500 1.3 mW W Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 www.kexin.com.cn
SMD Type DiodesSMD Type Transistors hFE Classification Marking C D E F hFE 40 to 80 60 to 120 100 to 200 160 to 320 Wide-Band Amplifier Applications 2SA1575 www.kexin.com.cn Electrical Characteristics TA=25 3 Parameter Symbol Test conditions Min Typ Max Unit Collector-base Breakdown voltage BV CBO IC =- 1 0ì A,IE = 0 -200 V Collector-emitter Breakdown voltage BV CEO IC =- 1 m A, RBE = -200 V Emitter-base Breakdown voltage BV EBO IE = -100 ìA , IC =0 - 4 V Collector-base cutoff current I CBO VCB = -150 V , IE =0 - 0 . 1 ì A Emitter-base cutoff current I EBO VEB =- 2V,I C =0 - 1 . 0 ì A Forward current transfer ratio h FE VCE =- 1 0V,IC =- 1 0m A VCE =- 1 0V,IC =- 6 0m A 320 Collector-emitter saturation voltage V CE(sat) IC =- 2 0m A,IB =- 2m A - 1 . 0 V Base -emitter saturation voltage V BE(sat) IE =- 2 0m A,IB =- 2m A - 1 . 0 V Transition frequency f T VCE =- 3 0V,IC= -30 mA 400 MHz Collector output capacitance (Common base, input open circuited) Cob VCB =- 3 0V,IE = 0 , f = 1MHz 2.3 pF Reverse Transfer Capacitance C re VCB= -30 V, f = 1MHz 1.7 pF