2SA1572 SANYO
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| Wo.2455 2SA1572/2SC4067 Lae ea PNP/ NPN Epitaxial Planar Silicon Transistors vee fae Switching Applications eve ed (with Bias Resistance) Applications Of se fe + Switching circuit, inverter circuit, interface cirguit, drivencircuit,” Features ff ty Sew? oe . On-chip bias resistance: R1=0, R2=47kQ of ho 5) ee . Small-sized package: SPA Sf BR ff ( ):_ PNP ff Sew ff Absolute Maxiaum Ratings at Ta=25°C ee Collector to Base Voltage Vopo f¢ f-180. vee Collector to Emitter Voltage Voro PE SEQSOE™ W eS Emitter to Base Voltage VeRo ff See ye Collector Current Ig ff gry aw Collector Current(Pulse) Iop of a ~)200 ma Collector Dissipation Po fs — 300." 7 mW Junction Temperature T3 ff Sm 150)" °c Storage Temperature Tste’ << ~55 to +150 % Rlectrical Characteristics at Ta25°Q” ss. Ff min typ max unit Collector Cutoff Current Ipaq’ oN cpe( sd 40vtge0 (-)0.1 #A Togo. Vege (-)40¥,tp=0 (-)0.5 HA Emitter Cutoff Current “Tieng . Vege (-)5¥sT¢=0 (-)81(-)106(-)151 0 WA DC Current. Gain Aap Sy. Vege (-)5¥4 Tg=(-) 10ma 80 Gain-Bandwidth Produc$'” fy <i%s, Vog=(e)10V, Ig=(-)5ma 250 MHz Output Capacitance,” &, pb Vegi (~) 10V, f= 1MHz 3.7 pF ef ek, SPF (5.5) C-E Saturation yortage™y Vor (gat),L¢=(-) 10mA,Ip=(-)0.5mA (-)0.1(-)0.3 0 V C-B Breakdown Voltagewer:¥epp) CBO, T= (~) 104 Ay Tp=0 (-)50 v C-E Breakdown’ Voltage“. V, BR)CEO Ip=(~) 100 A, Rpgsoo {-)50 v Resistance °° omy nd oe 33 47 61 ka Electrical Connegtion ff go See 4 Case Outline 2033 ‘pa O— pa go base O-— +0 ee t~ | oc e “ of ¢ B: Bi 04 Sy Pee : Base Cee] aos OE] § C: Collector emitter emitter B: Emitter SANYO: SPA Specifications and information herein are subject to change without notice. SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg. 1-10. 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 3247TA,TS No.2458-1/1