2SA1566_15 KEXIN

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www.kexin.com.cn 1 Transistors PNP Transistors 2SA1566 ■ Features

  • Low frequency amplifier ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -100 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -120 Collector- emitter breakdown voltage VCEO Ic= -1 mA，RBE= ∞ -120 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -70 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.1 Collector-emitter saturation voltage (Note.1) VCE(sat) IC=-10 mA, IB=-1 mA -0.15 Base - emitter saturation voltage (Note.1) VBE(sat) IC=-10 mA, IB=-1 mA -1 DC current gain (Note.1) hFE VCE= -12V, IC= -2mA 250 800 V uA V Note.1: Pulse test ■ Classification of hfe Type 2SA1566-D 2SA1566-E Range 250-500 400-800 Marking JID JIE 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 1. Base 2. Emitter 3. Collector 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1

www.kexin.com.cn2 Transistors PNP Transistors 2SA1566 ■ Typical Characterisitics 0 50 100 150 Ambient Temperature Ta (bC) Collector power dissipation Pc (mW) Maximum Collector Dissipation Curve 150 100 Typical Output Characteristics Collector to Emitter Voltage VCE (V) Collector Current IC (mA) IB = 0 –2 µA –10 –12 –14 –16 –18–20Pulse–10 Typical Transfer Characteristics Collector Current IC (mA) –0.1 –1.0 –10 –100 Base to Emitter Voltage VBE (V) VCE = –6 V Pulse Ta = 75bC 25 –25 DC Current Transfer Ratio vs. Collector Current Collector Current IC (mA) 100 300 1,000DC current transfer ratio hFE Ta = 75bC 25 –25 VCE = –12 V Pulse

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SA1566 ■ Typical Characterisitics Collector to Emitter Saturation Voltage vs. Collector Current Collector Current IC (mA) Collector to emitter saturation voltage VCE (sat) (V) –0.01 –0.03 –0.1 –0.3 –1.0 IC = 10 IB Pulse Ta = 75ϒC –25 Gain Bandwidth Product vs. Collector Current 100 200 1,000 500 Collector Current IC (mA) Gain bandwidth product fT (MHz) VCE = –6 V Pulse Collector Output Capacitance vs. Collector to Base Voltage Collector output capacitance Cob (pF) Collector to Base Voltage VCB (V) 100 f = 1 MHz IE = 0