2SA1562 SANYO

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. Adoption of MBIT process « High DC current gain « Large current capacity « Low collector to emitter saturation voltage - High Vepo Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vopo 30 v Collector to Emitter Voltage Voro -25 Vv Emitter to Base Voltage Vepo “15 v Collector Current Ic -1.2 A Collector Current(Pulse) Icp -2 A Collector Dissipation - Po 1 W Te=25°C 5 OW Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Ippo Vopt-20V, Ip=0 -1 pA Emitter Cutoff Current Ippgq — Vgpe-10V,1¢=0 -1 pA DC Current Gain hy Vope-5V,Ip=-100mA 500 800 1200 FE(1) CE’ Cc hpr(2) Vog=-5V,Ip=-10mA 350 Gain-Bandwidth Product fp . Vog=-10V,Ip=-50mA 130 MHz Output Capacitance Cop Vop=-10V, f= 1MHz 40 pF C~E Saturation Voltage Vor(sat) To=-500mA , I1p=-10mA 0.1 -0.5 V B-E Saturation Voltage Vpe(sat) Tc=-500mA,Ip=-10mA -0.78 -1.1 V Continued on next page. Package Dimensions 2045B Package Dimensions 2044B Fk 5.0.4 a pales . 0, |") ; t ae | -0.25° rs 8 eres B aa gedit 1: Base cme) 2: Collector —— 3: Emitter p23 1: Base : 2: Collector 4: Collector Ps] 3: Emitter SANYO: TP-FA 2a-s4--f----29 4: Collector SANYO: TP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN . ~~ " g919MO/5197TA,TS No.2261-1/3

Continued from preceding page. min typ max unit C-B Breakdown Voltage VBR) CBO Ip=(-) 10uA,1,=0 =30 Vv C-E Breakdown Voltage V(BR)CEO 7onn tae Reo “25 Vv E-B Breakdown Voltage V(BR)EBO Tg=-10pA,Ip=0 -15 Vv furn-ON Time ton See specified Test Circuit, 0.31 us Storage Time totg " 0.88 ps Fall Time te " 0.23 ps Switching Time Test Circuit geet ne “Unseor vr. i) 50 . te 100 Igj= 100Ig2= Ic =-700mA Woop J, 470y | iv ~Tov Unit Resistance :, Capacitance :F) i PT ie Zi som

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ai? TitTiT? Titi |) 3 oa dT & L) 0 > oO 10} 7 =K aT 0 =10 Collector Current ,I¢ - mA Corrector to Base Voltage, Vop ~Vv oot Ooo ' f T c/ 1 e=50. Se [| eH: POE et z a ke 10} 8 ig Hf ft tty FT ttt eit ttrtitt ttt y | wo ag SS OT TT TT 38 B34. SoH He ee yt TTT re ss ii] TT TTT bei) ods ETO ge DEPP terre sos ae pte re es PETE ET 83 om Pty ye ga iL TT UTT TTT Collector Current ,Ig - mA © coilector Gurrent 5g -a ASO I< Pc - Ta coe ERO Lop Stns 1 wp—t ge ORR] a “ee TORTS E4 \\ a a te mg PS can INET Pe NR £ Pek tt a é_ iit See) gf tT TEN TT eet CNC 3 a A 8, AS en & 7 si N ett TPT TT] 8 ese -1.0 -10 ° a 40 C) 60 100 120 0 150 160 Collector to Emitter Voltage,Vog - V Ambient Temperature,Ta - °C I No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO,, LTD, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees _ are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, _— ,-_L,_. No. 2261-3/3