2SA1552_08 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

Features

  • Adoption of FBET, MBIT processes.
  • High voltage and large current capacity.
  • Ultrahigh-speed switching.
  • Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact. Specifications ( ) : 2SA1552 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (- -)180 V Collector-to-Emitter Voltage VCEO (- -)160 V Emitter-to-Base Voltage VEBO (- -)6 V Collector Current IC (- -)1.5 A Collector Current (Pulse) ICP (- -)2.5 A Collector Dissipation PC Tc=25°C1 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C www.semiconductor-sanyo.com/network

91708 TI IM TC-00001624 / D0505CB MS IM X-0448 / 53002RM (KT) / 72098HA (KT) / 8109MO / 5137TA, TS

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. SANYO Semiconductors DATA SHEET 2SA1552 / 2SC4027 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching

Applications

http://semicon.sanyo.com/en/network

No.2262-2/5 Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB=(- -)120V, IE=0A (- -)1.0 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)1.0 μA DC Current Gain hFE1V CE=(- -)5V, IC=(- -)100mA 100* 400* hFE2V CE=(- -)5V, IC=(- -)10mA 80 Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)50mA 120 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (22)12 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=(- -)500mA, IB=(- -)50mA (- -0.2)0.13 (- -0.5)0.45 V Base-to-Emitterr Saturation Voltage V BE(sat) I C=(- -)500mA, IB=(- -)50mA (- -)0.85 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -)180 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)160 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)6 V Turn-On Time t on See specified Test Circuit. 60 ns Storage Time t stg See specified Test Circuit. (0.7)1.2 μs Fall Time t f See specified Test Circuit. (50)80 ns * ; The 2SA1552 / 2SC4027 are classified by 100mA hFE as follws: Rank R S T hFE 100 to 200 140 to 280 200 to 400 Package Dimensions Package Dimensions unit : mm (typ) unit : mm (typ) 7518-003 7003-003 Switching Time Test Circuit 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP VR RL 14kΩ 100V- -5V 10IB1= - -10IB2=IC=0.7A For PNP, the polarity is reversed. ++50Ω INPUT OUTPUTRB 100μF 470μF PW=20μs IB1 IB2D.C.≤1% 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA

No.2262-3/5 hFE -- IC hFE -- IC IC -- VBEIC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A DC Current Gain, hFE IC -- VCE IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A ITR03972 2SC4027 ITR03971 2SA1552 IB=0mA --1.0mA --1.5mA --0.5mA --2.0mA --2.5mA --3.0mA --5.0mA --4.5mA --4.0mA --3.5mA IB=0mA 0.5mA 1.0mA 1.5mA 2.0mA 2.5mA 3.0mA 4.0mA4.5mA 5.0mA 3.5mA --1.0 --0.8 --0.6 --0.4 --0.2 1.0 0.8 0.6 0.4 0.2 01 0 2 0 4 0 5 0 30 Ta=75°C 25°C --25°C 2SC4027 VCE=5V ITR03976 100 --0.01 1000 23 557 --0.172 3 5 7 --1.0 23 2SA1552 VCE= --5V ITR03975 Ta=75°C --25°C 25°C 2SC4027 VCE=5V --25 Ta=75 ITR03974 --25 Ta=75 2SA1552 VCE= --5V --0.4 --0.8 --1.2 --1.6 ITR03973 0.4 0.8 1.2 1.6 100 0.01 1000 23 57 0.172 3 5 7 1.0 23 IC -- VCE IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A ITR03970 2SC4027 --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 ITR03969 2SA1552 IB=0mA --1mA --2mA --10mA --5mA --20mA --40mA --60mA --80mA IB=0mA 1mA 2mA 5mA 10mA 20mA 30mA 40mA 50mA 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 012 45 3

No.2262-4/5 --1000 --100 ITR03979 2SA1552 IC / IB=10 Ta=75°C --25°C 25¡C 1000 100 0.10.01 5772 3 1.05723 23 ITR03980 2SC4027 IC / IB=10 Ta=75°C --25°C 25°C 1.0 0.1 0.01 57 2 5 37 25 371.0 10 2100 ITR03983 2SA1552 / 2SC4027 ITR03982 IT10480 --10 --1.0 ITR03981 2SA1552 IC / IB=10 2SC4027 IC / IB=10 1.2 1.0 0.8 0.6 0.4 0.2 100 140 120 1602006 0 40 80 2SA1552 / 2SC4027 Ta=--25°C 75°C 25°C IC=1.5A ICP=2.5A 1ms 100ms 10msDC operation (Tc=25 °C) DC operation (Ta=25 °C) Ta= --25°C 75°C 25°C 1.0 0.0172 3 7 523 7 52 3 0.1 1.0 VBE(sat) -- IC VBE(sat) -- IC VCE(sat) -- ICVCE(sat) -- IC Collector Current, IC -- A Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- V A S O Tc=25°C Single Pulse For PNP minus sign is omitted. PC -- Ta Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A No heat sink Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF 100 325 7 3 25 70.01 0.1 21.0 ITR03977 ITR03978 100 325 7325 71.0 10 100 2SA1552 / 2SC4027 VCE=10V 2SC4027 2SA1552 2SA1552 / 2SC4027 f=1MHz 2SC4027 2SA1552 For PNP minus sign is omitted.For PNP minus sign is omitted. fT -- IC Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz

No.2262-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS PC -- Tc Case Temperature, Tc -- °C Collector Dissipation, PC -- W IT10479 100 140 120 1602006 0 40 80 2SA1552 / 2SC4027 This catalog provides information as of September, 2008. Specifications and information herein are subject to change without notice.