Download PDF2SA1534 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
2SA1534, 2SA1534A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC3940 and 2SC3940A n Features l Complementary pair with 2SC3940 and 2SC3940A. l Allowing supply with the radial taping and automatic insertion possible. n Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –30 –60 –25 –50 –1.5 150 –55 ~ +150 Unit V V V A A W 2SA1534 2SA1534A 2SA1534 2SA1534A n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO V CBO V CEO V EBO hFE1 * hFE2 V CE(sat) V BE(sat) fT C ob Conditions V CB = –20V, IE = 0 IC = –10mA, IE = 0 IC = –2mA, IB = 0 IE = –10mA, IC = 0 V CE = –10V , IC = –500mA V CE = –5V , IC = –1A IC = –500mA, IB = –50mA IC = –500mA, IB = –50mA V CB = –10V , IE = 50mA, f = 200MHz V CB = –10V , IE = 0, f = 1MHz min –30 –60 –25 –50 typ – 0.2 – 0.85 200 max – 0.1 340 – 0.4 –1.2 Unit mA V V V V V MHz pF *hFE1 Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 Unit: mm 1:Emitter 2:Collector 3:Base TO–92NL Package 5.0–0.2 13.5–0.5 0.7–0.2 8.0–0.2 1.27 123 1.27 4.0–0.2 0.45 +0.15 –0.10.45 +0.15 –0.1 2.3–0.2 0.7–0.1 2.54–0.15 2SA1534 2SA1534A 2SA1534 2SA1534A
Transistor 2SA1534, 2SA1534A 0 160 40 120 80 14020 100 60 1.2 1.0 0.8 0.6 0.4 0.2 Ambient temperature Ta (˚C) Collector power dissipation PC (W ) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=–25˚C 25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) –600 –500 –400 –300 –200 –100 VCE =–10V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 1 3 10 30 100 200 160 120 180 140 100 VCB =–10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.1 1 10 1000.3 3 30 –120 –100 –80 –60 –40 –20 IC =–10mA Ta=25˚C 2SA1534A 2SA1534 Base to emitter resistance RBE (kW ) Collector to emitter voltage VCER (V) –1.5 –1.25 –1.0 – 0.75 – 0.5 – 0.25 Ta=25˚C IB=–10mA –9mA –8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA Collector to emitter voltage VCE (V) Collector current IC (A) –1.2 –1.0 – 0.8 – 0.6 – 0.4 – 0.2 VCE =–10V Ta=25˚C Base current IB (mA ) Collector current IC (A) PC —T a I C —V CE IC —I B V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I E C ob —V CB V CER —R BE
Transistor 2SA1534, 2SA1534A 0 160 40 120 80 14020 100 60 102 103 104 VCE =–10V Ambient temperature Ta (˚C) ICEO (Ta) ICEO (Ta=25˚C) – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –10 Single pulse Ta=25˚C t=10ms 2SA1534A 2SA1534 t=1s ICP IC Collector to emitter voltage VCE (V) Collector current IC (A) ICEO — Ta Area of safe operation (ASO)