2SA1532_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SA1532 ■ Features

  • High transition frequency fT.
  • Complementary to 2SC3930 1.Base 2.Emitter 3.Colletor ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -30 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -30 Collector- emitter breakdown voltage VCEO Ic= -1 mA，IB= 0 -20 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -30 V , IE=0 -0.1 Collector-Emitter cut-off current ICEO VCE= -20 V , IB=0 -100 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-10 mA, IB=-1 mA -0.1 Base - emitter saturation voltage VBE(sat) IC=-10 mA, IB=-1 mA -1.2 Base - emitter voltage VBE VCE= -10V, IC= -1mA -0.7 DC current gain hFE VCE= -10V, IC= -1mA 70 220 Noise Figure NF VCB = –10V, IE = 1mA, f = 5MHz 2.8 4 dB Reverse transfer impedance Zrb VCB = –10V, IE = 1mA, f = 2MHz 22 60 Ω Common emitter reverse transfer capacitance Cre VCE = –10V, IC = –1mA f = 10.7MHz 1.2 2 pF Transition frequency fT VCE= -10V, IE= 1mA,f=200MHz 150 300 MHz V uA V ■ Classification of hfe Type 2SA1532-B 2SA1532-C Range 70-140 110-220 Marking EB EC

www.kexin.com.cn2 Transistors PNP Transistors 2SA1532 ■ Typical Characterisitics 0610 40 12080 14020 10060 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW) –30 –25 –20 –15 –10 Ta=25˚C IB=–250µA –200µA –150µA –100µA –50µA Collector to emitter voltage VCE (V) Collector current IC (mA) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC/IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (mA) Collector to emitter saturation voltage VCE(sat) (V) 120 100 VCE=–10V Ta=75˚C 25˚C –25˚C Collector current IC (mA) Forward current transfer ratio hFE f=1MHz IE=0 Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) IC=–1mA f=10.7MHz Ta=25˚C Collector to emitter voltage VCE (V) Common emitter reverse transfer capacitance Cre (pF) 0.1 1 10 1000.3 3 30 600 500 400 300 200 100 VCB=–10V Ta=25˚C Emitter current IE (mA) Transition frequency fT (MHz) VCE=–10V f=100MHz Ta=25˚C Collector current IC (mA) Power gain PG (dB) 0.1 0.3 1 3 10 VCB=–10V f=100MHz Ta=25˚C Emitter current IE (mA) Noise figure NF (dB) PC IaT— C — VCE VCE(sat) — IC hFE — IC Cob — VCB Cre — VCE fT — IE PG — IC NF — IE