2SA1532 KEXIN
Document overview
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Technical content
Features
High transition frequency fT. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -30 V Collector-emitter voltage V CEO -20 V Emitter-base voltage V EBO -5 V Collector current I C -30 mA Collector power dissipation P C 150 mW Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Base-emitter saturation voltage V BE VCE =- 1 0ì A ,IC =- 1m A - 0 . 7 V Collector-base cutoff current I CBO VCB =- 1 0V ,IE =0 - 0 . 1 ì A Collector-emitter cutoff current I CEO VCE =- 2 0V ,IB = 0 -100 ìA Emitter-base cutoff current I EBO VEB =- 5V ,IC =0 - 1 0 ì A Forward current transfer ratio h FE VCB =- 1 0V ,IE = 1 mA 50 220 Collector-emitter saturation voltage V CE(sat) IC =- 1 0m A ,IB =- 1m A - 0 . 1 V Transition frequency f T VCB =- 1 0V ,IE = 1 mA, f = 200 MHz 150 300 MHz Noise voltage NF V CB =- 1 0V ,IE = 1 mA, f = 5 MHz 2.8 4.0 dB Reverse transfer impedance Z rb VCB =- 1 0V ,IE = 1 mA, f = 2 MHz 22 60 Ù Common-emitter reverse transfer capacitance C re VCB =- 1 0V ,IE = 1 mA, f = 10.7 MHz 1.2 2.0 pF hFE Classification Marking Rank A B C hFE 50 100 70 140 110 220 E