2SA1531 PANASONIC

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2SA1531, 2SA1531A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC3929 and 2SC3929A n Features l Low noise voltage NV . l High foward current transfer ratio hFE . l S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –35 –55 –35 –55 –100 –50 150 150 –55 ~ +150 Unit V V V mA mA mW 2SA1531 2SA1531A 2SA1531 2SA1531A n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage Symbol I CBO ICEO V CBO V CEO V EBO hFE *1 V CE(sat) V BE fT NV Conditions V CB = –10V, IE = 0 V CE = –10V , IB = 0 IC = –10mA, IE = 0 IC = –2mA, IB = 0 IE = –10mA, IC = 0 V CE = –5V , IC = –2mA IC = –100mA, IB = –10mA*2 V CE = –1V , IC = –100mA*2 V CB = –10V , IE = 2mA, f = 200MHz V CE = –10V , IC = –1mA, GV = 80dB R g = 100kW , Function = FLAT min –35 –55 –35 –55 180 typ – 0.7 max –100 700 – 0.6 –1.0 150 Unit nA mA V V V V V MHz mV *1hFE1 Rank classification Rank R S T hFE 180 ~ 360 260 ~ 520 360 ~ 700 2SA1531 FR FS FT 2SA1531A HR HS HT Marking symbol :F(2SA1531) H (2SA1531A) Unit: mm 1:Base 2:Emitter EIAJ:SC–70 3:Collector S–Mini Type Package 2.1–0.1 1.3–0.10.9–0.1 0.7–0.1 0.3 +0.1 –0 0.15 +0.1 –0.05 2.0–0.2 0.650.2 0.65 0 to 0.1 0.2–0.1 *2 Pulse measurement Marking Symbol 2SA1531 2SA1531A 2SA1531 2SA1531A

Transistor 2SA1531, 2SA1531A 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) –160 –120 –40 –100 –140 –80 –20 –60 Ta=25˚C IB=–350mA –300mA –250mA –200mA –150mA –100mA –50mA Collector to emitter voltage VCE (V) Collector current IC (mA ) –160 –120 –40 –100 –140 –80 –20 –60 VCE =–5V Ta=25˚C Base current IB (mA ) Collector current IC (mA ) –800 –600 –200 –500 –700 –400 –100 –300 VCE =–5V Ta=25˚C Base to emitter voltage VBE (V) Base current IB (mA) –120 –100 –80 –60 –40 –20 VCE =–5V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 600 500 400 300 200 100 VCE =–5V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 0.1 1 10 1000.3 3 30 500 400 300 200 100 450 350 250 150 VCB =–5V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC —T a I C —V CE IC —I B IB —V BE IC —V BE V CE(sat)—I C hFE —I C fT —I E C ob —V CB

Transistor 2SA1531, 2SA1531A 160 120 100 140 IC =–1mA G V=80dB Function=FLAT 4.7kW R g=100kW 22kW Collector to emitter voltage VCE (V) Noise voltage NV (mV ) 300 240 120 180 IC =–1mA G V=80dB Function=FLAT 4.7kW R g=100kW 22kW Collector to emitter voltage VCE (V) Noise voltage NV (mV ) 160 120 100 140 VCE =–10V G V=80dB Function=FLAT 4.7kW R g=100kW 22kW Collector current IC (mA ) Noise voltage NV (mV ) 300 240 120 180 VCE =–10V G V=80dB Function=RIAA 4.7kW R g=100kW 22kW Collector current IC (mA ) Noise voltage NV (mV ) 1 3 10 30 100 160 120 100 140 VCE =–10V G V=80dB Function=FLAT – 0.1mA IC =–1mA – 0.5mA Signal source resistance Rg (kW ) Noise voltage NV (mV ) 1 3 10 30 100 300 240 120 180 VCE =–10V G V=80dB Function=RIAA – 0.1mA IC =–1mA – 0.5mA Signal source resistance Rg (kW ) Noise voltage NV (mV ) NV — V CE NV — V CE NV — I C NV — I C NV — R g NV — R g