2SA1514K_15 KEXIN

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  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SA1514K ■ Features

  • High Breakdown Voltage
  • Lead Free/RoHS Compliant.
  • Complementary to 2SC3906K ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 Collector Current - Pulse (Note.1) ICP -100 Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V mA Note.1: PW=100ms,Single Pulse ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -50 μA， IE=0 -120 Collector- emitter breakdown voltage VCEO Ic= -1 mA，IB= 0 -120 Emitter - base breakdown voltage VEBO IE= -50μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -100 V , IE=0 -0.5 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.5 Collector-emitter saturation voltage VCE(sat) IC=-10 mA, IB=-1 mA -0.5 Base - emitter saturation voltage VBE(sat) IC=-10 mA, IB=-1 mA -1.2 DC current gain hFE VCE= -6V, IC= -2mA 180 560 Collector output capacitance Cob VCB= -12V, IE= 0,f=1MHz 3.2 pF Transition frequency fT VCE= -12V, IE= 2mA,f=100MHz 140 MHz V uA V ■ Classification of hfe Type 2SA1514K-R 2SA1514K-S Range 180-390 270-560 Marking RR RS 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 1. Base 2. Emitter 3. Collector 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1

www.kexin.com.cn2 Transistors PNP Transistors 2SA1514K ■ Typical Characterisitics 100 1000 10000 -0.1 -1 -10 -100 VCE= ̺6V Ta=100ºC 25ºC ̺40ºC -0.1 -10 0 -0.5 -1 -1.5 -2 VCE= ̺6V Ta=̺40ºC 25ºC 100ºC 100 1000 10000 -0.1 -1 -10 -100 Ta=25ºC VCE= ̺5V ̺3V ̺1V Fig.1 Ground Emitter Propagation Characteristics COLLECTOR CURRENT : IC [mA] BASE TO EMITTER VOLTAGE : VBE [V] Fig.2 Typical Output Characteristics COLLECTOR CURRENT : IC [mA] COLECTOR TO EMITTE VOLTAGE : VCE [V] Fig.3 DC Current Gain vs. Collector Current(I) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC [mA] Fig.4 DC Current Gain vs. Collector Current(II) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC [mA]

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SA1514K ■ Typical Characterisitics -0.1 -10 -0.1 -1 -10 -100 Ta= ̺40ºC 25ºC 100ºC IC / IB = 10/1 -0.01 -0.1 -10 -0.1 -1 -10 -100 IC / IB = 10/1 Ta=100ºC 25ºC ̺40ºC -0.01 -0.1 -10 -0.1 -1 -10 -100 Ta=25ºC IC / IB =50/1 Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (I) COLLECTOR-EMITTER SATURATION VOLTAGE : VCE(sat) [V] COLLECTOR CURRENT : IC [mA] Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (II) COLLECTOR-EMITTER SATURATION VOLTAGE : VCE(sat) [V] COLLECTOR CURRENT : IC [mA] Fig.7 Base-Emitter Saturation Voltage vs. Collector Current BASE-EMITTER SATURATION VOLTAGE : VBE(sat) [V] COLLECTOR CURRENT : IC [mA] Fig.8 Gain Bandwidth Product vs. Emitter Current TRANSITION FREQUENCY : fT [MHz] EMITTER CURRENT :IE [mA]

www.kexin.com.cn4 Transistors PNP Transistors 2SA1514K ■ Typical Characterisitics -0.1 -10 -100 -1000 Ta=25ºC Single non repetitive pulse 2SA1514K DC (Mounted on a reference land) 10ms 1ms 100ms 100 -0.1 -1 -10 -100 Ta=25ºC f=1MHz IE=0A Cob Cib Fig.9 Emitter input capacitance vs. Emitter-Base Voltage Collector output capacitance vs. Collector-Base Voltage COLLECTOR OUTPUT CAPACITANCE : Cob [pF] EMITTER INPUT CAPACITANCE : Cib [pF] COLLECTOR - BASE VOLTAGE : VCB [V] EMITTER - BASE VOLTAGE : VEB [V] Fig.10 Safe Operating Area COLLECTOR CURRENT : IC [mA] COLLECTOR TO EMITTER VOLTAGE : VCE [V]