2SA1484_15 KEXIN

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www.kexin.com.cn 1 SMD Type Transistors Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP VegatlovesabotrotcelloC CBO -90 V VegatlovrettimeotrotcelloC CEO -90 V VegatlovesabotrettimE EBO -5 V ItnerrucrotcelloC C -100 mA PnoitapissidrewoprotcelloC C 150 mW 051jTerutarepmetnoitcnuJ TerutarepmetegarotS stg -55 to +150 Electrical Characteristics Ta = 25 tinUxaMpyTniMsnotiidnoctseTlobmySretemaraP Collector to base breakdown voltage V(BR)CBO IC = -10 uA, IE V09-0= Collector to emitter breakdown voltage V(BR)CEO IC = -1 mA, RBE = -90 V Emitter to base breakdown voltage V(BR)EBO IE V5-0=CI,Au01-= ItnerrucffotucrotcelloC CBO VCB = -70 V, IE Au1.0-0= ItnerrucffotucrettimE EBO VEB = - 4V, IC Au1.0-0= hoitarrefsnarttnerrucCD FE VCE = -12 V, IC = -2 mA ( * ) 250 800 Collector to emitter saturation voltage VCE(sat) IC = -10 mA, IB V51.0-)*(Am1-= Base to emitter saturation voltage VBE(sat) IC = -10 mA, IB V1-)*(Am1-= * Pulse test. PNP Transistors 2SA1484 ■ Features

  • Collector Current Capability IC=100mA
  • Collector Emitter Voltage VCEO=-90V ■ Classification of hfe 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 1. Base 2. Emitter 3. Collector 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 Type 2SA1484-D 2SA1484-E Range 250-500 400-800 Marking IRD IRE

www.kexin.com.cn2 Transistors PNP Transistors 2SA1484 ■ Typical Characterisitics 0 50 100 150 Ambient Temperature Ta (ϒC) Collector power dissipation Pc (mW) Maximum Collector Dissipation Curve 150 100 Typical Output Characteristics (1) Collector to Emitter Voltage VCE (V) Collector Current IC (mA) –20 –16 –12 P C = 150 mW IB = 0 –5 µA –10 –15 –20 –25 –30 Typical Output Characteristics (2) Collector to Emitter Voltage VCE (V) Collector Current IC (mA) –10 PC = 150 mW IB = 0 –2 µA –10 –12 –14 –16 –18–20 Typical Transfer Characteristics Collector Current IC (mA) –0.1 –1.0 –10 –100 Base to Emitter Voltage VBE (V) VCE = –6 V Pulse Ta = –25bC Collector Cutoff Current vs. Collector to Base Voltage Collector to Base Voltage VCB (V) Collector cutoff current ICBO (pA) –10 –100 –1,000 –10.000 Ta = 75bC –25 IE = 0 Pulse Collector Cutoff Current vs. Collector to Emitter Voltage Collector to Emitter Voltage VCE (V) Collector cutoff current ICEO (nA) –0.1 –1.0 –10 –100 –1,000 Ta = 75bC –25 RBE = ∞ Pulse

www.kexin.com.cn 3 Transistors PNP Transistors 2SA1484 ■ Typical Characterisitics Emitter Cutoff Current vs. Emitter to Base Voltage Emitter to Base Voltage VEB (V) Emitter cutoff current IEBO (pA) –0.1 –1.0 –10 –100 –1,000 Ta = 75bC –25 IC = 0 Pulse Collector to Emitter Breakdown Voltage vs. Base to Emitter Resistance Base to Emitter Resistance RBE (Ω) 10 100 1 k 10 k 100 k Collector to emitter breakdown voltage V(BR) CER (mA) –140 –150 –160 –170 –180 –190 Typical Value IC = –1 mA DC Current Transfer Ratio vs. Collector Current Collector Current IC (mA) 100 300 1,000DC current transfer ratio hFE Ta = 75bC –25 VCE = –12 V Pulse Collector to Emitter Saturation Voltage vs. Collector Current Collector Current IC (mA) Collector to emitter saturation voltage VCE (sat) (V) –0.01 –0.03 –0.1 –0.3 –1.0 Ta = 75bC –25 IC = 10 IB Pulse Base to Emitter Saturation Voltage vs. Collector Current Collector Current IC (mA) Base to emitter saturation voltage VBE (sat) (V) –0.1 –0.3 –1.0 –10 Ta = –25bC25 IC = 10 IB Pulse