2SA1483_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SA1483 ■ Features

  • High transition frequency
  • Low collector output capacitance
  • Complementary to 2SC3803 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -45 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -200 Base Current IB -50 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V mA ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -0.5 mA，IB= 0 -45 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -45 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=-10 mA -0.3 Base - emitter saturation voltage VBE(sat) IC=-100 mA, IB=-10 mA -1 Input impedance (real part) Re(hie) VCB= -10V, IE=10mA,f=200MHz 120 Ω VCE= -1V, IC= -10mA 40 240 VCE= -3V, IC= -200mA 20 Turn-on time ton 40 Storage time tstg 250 Fall time tf 30 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 3.5 5 pF Transition frequency fT VCE= -10V, IC= -10mA 100 200 MHz ns V uA V DC current gain hFE ■ Classification of hfe(1) See Test Circuit. 1.Base 2.Collector 3.Emitter Type 2SA1483-R 2SA1483-O 2SA1483-Y Range 40-80 70-140 120-240 Marking WR* WO* WY*

www.kexin.com.cn2 Transistors PNP Transistors 2SA1483 Switching Time Test Circuit 50 Ω 200 Ω OUTPUT 500 Ω 680 Ω VCC = −12 VVBB = 3 V INPUT −10 V 1 μs DUTY CYCLE ≤ 2% ■ Typical Characterisitics Collector-emitter voltage VCE (V) IC – VCE Collector current IC (mA) Collector-emitter voltage VCE (V) IC – VCE Collector current IC (mA) Collector current IC (mA) VBE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) Collector current IC (mA) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Collector current IC (mA) hFE – IC DC current gain hFE 300 1000 500 Common emitter VCE = −3 V −3 −1 100 Ta = 100°C −55 −0.1 −1 −100 −30 −0.3 −0.3 −0.5 Common emitter IC/IB = 10 −0.1 −3 −10 Ta = −55°C 100 0 −1 −40 −80 −120 −160 −200 Common emitter Ta = 25°C IB = −0.2 mA −0.5 −1.0 −1.5 −2.0 −3.0 −5.0 −10 0 −1 −40 −80 −120 −160 −200 Common emitter Ta = 100°C IB = −0.2 mA −0.6 −8.0 −4.0 −2.0 −1.0 −0.1 −0.1 −1 −100 −30 −0.3 −0.03 −0.05 Common emitter IC/IB = 10 −0.01 −3 −10 −0.3 −0.5 Ta = 100°C −55

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SA1483 ■ Typical Characterisitics Collector-emitter voltage VCE (V) IC – VCE Collector current IC (mA) Ambient temperature Ta (°C) PC – Ta Collector power dissipation PC (W) 0 120 80 100 40 60 0.6 0.2 1.0 0.4 1.2 20 160140 0.8 (1) Mounted on a ceramic substrate (250 mm2 × 0.8 t) (2) No heat sink 0 −1 −40 −80 −120 −160 −200 Common emitter Ta = −55°C IB = −0.5 mA −1.0 −1.5 −2.0 −3.0 −4.0 −6.0