2SA1476 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
+ High fp (fp typ=40OMHz) « High breakdown voltage (Vogq2200V) « Small reverse transfer capacitance and excellent high frequency characteristic (¢,,,=2. 1PF (NPN), 2.6pF (PNP) ) « Complementary PNP and NPN types « Adoption of FBET process ( ): 2SA1476 . Absolute Maximum Ratings at Ta=25°C unit Collector-to-Base Voltage Vogo (-)200 v Collector-to-Emitter Voltage Voro (-)200 Vv Emitter-to-Base Voltage VgRo (-)4 ov Collector Current ~ Ic (-)200 mA Peax Collector Current Lop (-)300 mA Collector Dissipation Po 1.5 W Te=50°C 5 OW Junction Temperature Tj 150% Storage Temperature Tstg -55 to +150 % Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Ippo Vop=(-) 150V,1p=0 (+)0.1 0 pa Emitter Cutoff Current Ippo Vpp=(-)2V, 1920 : (-)1.0 pa DC Current Gain hge(1) Veg=(-)10V, Fg=(~) 10m8 hoe 320* hpp(2) Vog=(-)10V,I¢=(-)100mA 20 Gain-Bandwidth Product fp Vog=(-)30V, Ig=(-)50mA 400 MHz C-E Saturation Voltage — Vog(sat) Ic=(-)50mA,Ip=(-)5mA 0.6 Vv (-0.8) Vv . B-E Saturation Voltage Vap(sat) Ig=(-)50mA,Ip=(-)5mA (-)1.0 0 V C-B Breakdown Voltage V(pR) CBO Ip=(-)10pA,I,=0 (-)200 Vv C-E Breakdown Voltage V¢pr)cgo. I¢=(-) 1mA, Rpp=oo (-)200 v E-B Breakdown Voltage V(BR)EBO Tp=(-) 100A Fo=0 (-)4 Vv Output Capacitance Cob Vog=(~)30V, f= 1MHz 2.6(3.1) pF Reverse Transfer Che Vope(~)30V, f= 1MHz 2.1(2.6) pF Capacitance . *: The 2SA1476/2SC3782 are classified Package Dimensions 20104 by 10mA hp, as follows: (unit: mm) bef fe yo c 80 [ 60 D 120 id? Sos amb 100 _E 200 | 160 F 320 aan sara ws = = E; Emitter ‘Gel ee C: Collecter " B: Base
7 JEDEC: TO-220AB
: EIAJ: SC-46 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters . TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN , : 6248MO/4O77TA ,TS No.2528-1/3 .
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i COO 38] TTT TT an | Hy UT Ty 82, aX na fepeer Tt eeere eo 88 pti yr pyr 84 pitt yyy . = > 1 c Collector Current ,I¢ - oA Collector Current I - mA ASO Pc - Ta ON CA y [) Sof | PRT BONG > NN § Ed 75 ry z él tit PAC EN gi TT TP RET PORE ccs COT PAS a zi | | | | INT I {For PNP, minus sign is omitted.) |_| 8 A ee 0 1 oO 2 40 60 80 100120 hO” 160 Collector-to- Emitter Voltage, Vop -vV Ambient ‘Tenperature,Ta - % MENo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and . the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, : Subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be-cited in any such claim or litigation on SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, ; : Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of . third parties. : . ee / No. 2528-3/3