2SA1451A NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

£/ *_/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1451A

DESCRIPTION

  • Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@lc= -6A
  • Good Linearity of hFE
  • High Switching Speed
  • Complement to Type 2SC3709A

APPLICATIONS

  • Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) PIN 1.BASE 2.COLLECTOR 3. EMITTER TO-220F package SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -60 -50 -12 150 -55-150 UNIT V V V A A W a F '. - - D - H - - c - -s- ; 6 ':''." '
  • ' u M - R- K J - - DIM A B C D F H J K L N q R S iL mm WIN 14.95 10.00 4.40 0.75 3.10 3.70 0.50 13.4 1.10 5.00 2.70 2.20 2.65 6.40 MAX 15.05 10.10 4.60 0.90 3.30 3.90 0.70 13.6 1.30 5.20 2.90 2.40 2.90 6.60 A NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Silicon PNP Power Transistor 2SA1451A

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VeE(sat) ICBO IEBO hpE-1 hFE-2 COB fi PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -50mA; IB= 0 lc= -6A; IB= -0.3A lc= -6A; IB= -0.3A VCB= -60V; IE= 0 VEB= -6V; lc= 0 lc=-1A;VCE=-1V lc=-6A;VCE=-1V lE=0;VcB=-10V;ftest=1MHz lc= -1A; VCE= -5V MIN -50 TYP. 320 MAX -0.4 -1.2 -10 -10 240 UNIT V V V uA u A PF MHz Switching Times ton tstg tf Turn-on Time Storage Time Fall Time lc=-6A,lBi=-lB2=-0.3A, Vcc= -30V, RL= SO 0.3 1.0 0.5 u S u s u s h.FE-1 Classifications o 70-140 Y 120-240