2SA1451A TOSHIBA
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TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm e Low Collector Saturation Voltage 10203 g32t02 27202 : VCE (sat)= —0.4V (Max.) (at I¢= —6A) Ez 3 <j / ol mn © High Speed Switching Time : tetg=1.0/s (Typ.) 3 “7 | 2 3 © Complementary to 28C3709A Fe rT | 7 MAXIMUM RATINGS (Ta =25°C) | i 5 i CHARACTERISTIC SYMBOL | RATING omens | | Collector-Base Voltage Vopgo | —60 | V__ || 2ssz025 2540.25 Collector-Emitter Voltage Vcro | -50 [ V | Fa Fe Emitter Base Vollage Ven | -6 |v] i 3 Collector Current 5 : 1. BASE ‘ollector Power Dissipation 2. COLLECTOR (Te=25°C) Pc 30 Ww 3. EMITTER Junction Temperature TEBE = Storage Temperature Range —55~150 TOSHIBA 2-10R1A 261001441 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the mast recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed. by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-12-20 1/4
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [saw | rye. )Max.|unrr] Collector Cut-off Current IcBo Vop=—60V, In=0 | — | — [-10 | pA | Emitier Cutoff Current | Ippo |VEp=—6V, 1p=0 Dp p10 | Collector-Emitter FE (1) = = DC Current Gain (Note) _|VOE=—1V. Io=—1A 70 240 Saturation] Collector-Emitter I¢=-6A, Ip=-0.3A | — |-0.15]-04 | | Voltage VBE (sat) |Io= —6A, Ip=-0.3A | — | -0.9|-12 | Collector Output = = = ame [ea fornia mam | = | af — | Tp2 — SG Switching . I it Ip1 ro) Time Storage Time | tstg ‘B1 us a Voc=-30V Fall Time te ~Ip1=1p2=0.3A DUTY CYCLES1% (Note) hyg (1) Classification O:70~140, Y : 120~240 1997-12-20 2/4
Ic - Vor _ Vor - Ic 10 | [-~ | | | COMMON = 7 | |] COMMON EMITTER = ATA EMITTER & Ip=—10mA [| | Te= 25°C 2 | ae ee tense e “TI VIZ T| Pee ebetebahyl) i (aseeeeee Cone 2 OO ae
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ALL TTT itt ti tt | 8 WAT TT 0 2 -4 -6 -8 -10 -12 -14 0 -2 4 -6 -8 -10 -12 COLLECTOR-EMITTER VOLTAGE Veg (V) COLLECTOR CURRENT Ic (A) = 19 Vor = Ic = 19 Vor = Ic ar S 1 i fl [T][] COMMON EMITTER ~ ({] i] ] COMMON EMITTER gL] | g TTI | [| 1) SOT TTA VT) nn ies A ot HAZ EL EEL AZZ GAVE Ze 2 LILI AAYyY y == = 2 ol AZ Sl gee 8 | Ya a) cama COLLECTOR CURRENT Ic (A) COLLECTOR CURRENT Ic (A) hrE — Ic VCE(sat) — IC 500 ~ 08 a oof HT one mee g -of ge pee ape ee LT ee eee ae . Sees eee Eo SEE oe os Std Ee San ee i eee a a -* B gf | MI TT ES ooo eat aT TT Ty BN |] TI a ee a =10 a =10 COLLECTOR CURRENT Ic (A) COLLECTOR CURRENT Ic (A) 1997-12-20 3/4
5 VBE(sat) — IC 10 Ic — VBE
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ee ea g tectore_1 1h r | | tt Fe _o5—— NN | 5 f se tN tt |g tt Be LL eC Co] ef] AR A dda] * ot LUM TM | "eg et LLU LIE 2 CO ae emmy te um ALIAAF TT i tt COLLECTOR CURRENT Ic (A) 0 -04 -08 -12 -16 -20 -24 Tth — tw BASE-EMITTER VOLTAGE Vpp (V) g sited soup BE APPLIED IN THERMAL « “4% _ Ta z (SINGLE NONREPETITIVE PULSE) _ [ | | © kets Z ° eee nae SINK = fl ti) INFINITE HEAT SINK PR) meee meee memset eee east eer 2 % [ | | [® NoHBaT sink = A E30) * Cth = Sof PEA PULSE WIDTH tw (s) oS 30) SAFE OPERATING AREA ° case ournarune *. oo “ - Ont] gS ND nee Se ESE & uo SN omar | & _s I TTINALAN |
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E Ti] MINT | KN a el A | 3 a a eS S _o | ¥ SINGLE NonrePetitive [QY TTT | cunvasuvsr se penaten -N{I{IT | LINEARLY WITH INCREASE —t -3 -10 -30 -100 COLLECTOR-EMITTER VOLTAGE Vcg (V) 1997-12-20 4/4