2SA1450 SANYO

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Technical content

Features

+ Adoption of FBET process - AF amp, AF power amp - High breakdown voltage Vozo >80V ( ):2SA1450 Absolute Maximum Ratings at Ta= 25°C unit Collector to Base Voltage Vcso (— )100 Vv Collector to Emitter Voltage = VcEro (— )80 v Emitter to Base Voltage VEBO (—)5 Vv Collector Current, Io (—)500 mA Collector Current (Pulse) Iop (- )800 mA Base Current Ip (—)100 mA Collector Dissipation Po 600 mW Junction Temperature Tj 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta = 25°C min typ max unil Collector Cutoff Current IcBo Vep=(—)60V,Ip=0 (-)0.1 pA Emitter Cutoff Current Igpo Vep=(—)4V,Ic=0 (-)0.1 pA DC Current Gain hpe() = Veg=(—)5V,Ic=(—)50mA 100% 400% hpg(2) Vog=(—-)5V,Ig=(—)400mA 60 Gain-Bandwidth Product fy Ver=(—)10V,I¢=(—)10mA 120 MHz C-E Saturation Voltage Verisat) Io=(—)400mA,Ig=(—)40mA 0.16 Vv {—0.2) (—0.5) B-E Saturation Voltage Veprsat) Ic=(—)400mA,Ig=(—)40mA (-)0.9 (—)1.2 v Output Capacitance Cob Vop=(—)10V,f=1MHz (7)5 pF C-B Breakdown Voltage Vipricso Ic=(—)10pA,Ip=0 (—)100 v C-E Breakdown Voltage Vipryceo Ic=(—)1mA,Rgr= © (—)80 v E-B Breakdown Voltage Vearmeso Ip=(—)10pAIc=0 (5 Vv %* : The 28A1450/2SC3708 are classified by 50mA hpg as follows :

100 R 200 140 S$ 280 200 T 400

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JEDEC: TO-92 B: Base EIAJ : SC-43 C: Collector SANYO: NP E: Emitter SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN | D129MO/2197TA,TS No.2217-1/4

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clo | on tt |) toma] Co eco ET eT TT 20] % 10 20 ~ 7.) =50 % 10 20 30 4c 50 ~ Collector to Emitter Voltage, Vcg — V Collector to Emitter Voltage, Vog — V Ic - VBE Ic - Vee re sA1e50 aa 25¢3708 < 500} < 500} i [|_| i 1 b | 690 E -a 2 £ 300 I ee eee ee TOOT Oe LA | | % “02 “04 za o8 “1.0 a2 i 02 04 06 a. 1.0 1.2 Base to Emitter Voltage,Vpp — V Base to Emitter Voltage,Vag — V fr - Ic 100 fr - Ic 2sc3708 : peeepe | TTT TTT) 2 PHA ree Airy poe oT eee : Eo j Se ee PO ooo ; : epoca gg EEE Ss Co ‘o vO Th0 7 “10 [000 1 2 F 5 49 2390 5 09 35 000: Collector Current,Ic — mA Collector Current,ig — mA No.2217-2/4

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feli tiie ritl Ui) & Pete sae a eee ot TP ET. LEE TT 10 “10 00 71000 1 23 5 19 23 5 wo 2 3 5 1000 Collector yaad —mA Collector Currentlg — mA : Po - Ta ‘EEE CO eee a TN INIANS Pt a)

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i. TT NI oe pin fn : 3 |For PNP, minus sign is omitted.) _th_] ° titi. otiNX | oo tS 2 F 100 O20 6 0 10 120 wo 160 Collector to Emitter Voltage, Vcg — V ____ Ambient Temperature,Ta - °C . No.2217-3/4

MINo products described.or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and . the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall: + @® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. @ Information {including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees. are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.2217-4/4